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Yageo, Corp.
YAGEO CORP
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| Part No. |
CLH1608B-68NK-H CLH1005B-68NK-H CLH1005B-68NJ-H CLH1005B-8N2K-H CLH1608B-8N2K-H CLH1005B-18NK-H CLH1608B-68NJ-H CLH1005T-18NJ-H CLH1005T-8N2K-H CLH1005B-8N2J-H CLH1005T-68NJ-H CLH1608B-18NJ-H CLH1005T-68NK-H CLH1608B-8N2J-H CLH1608T-18NJ-H CLH1005B-1N8S-H CLH1005B-39NK-H CLH1608T-R15J-H CLH1005B-10NJ-H CLH1005B-10NK-N CLH1005B-10NK-H
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| OCR Text |
... 0.6 1.2 3.0~4.0 1.0 clh1005- h clh1005- s clh1608-h clh1608-s clh1608-w series clh2012-s series clh1005-s series clh1608-s series clh1005...q min. q ty p ic al s rf d c r a t ed at 100m h z at 100m h z (m h z) min. r... |
| Description |
1 ELEMENT, 0.068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 1608
1 ELEMENT, 0.068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 1005
1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 1005
1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 1608
1 ELEMENT, 0.018 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 1005
1 ELEMENT, 0.018 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 1608
1 ELEMENT, 0.0018 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.039 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.15 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.01 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
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| File Size |
322.28K /
9 Page |
 View
it Online |
Download Datasheet
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Toshiba
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| Part No. |
TPC8037-H
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| OCR Text |
h 2008-07-04 1 toshiba field effect transistor silicon n-chan nel mos type (u-mos -h) tpc8037-h high-efficiency dc-dc converter ...q sw = 5.0 nc (typ.) ? low drain-source on-resistance: r ds (on) = 7.6 m (typ.) ? high forwa... |
| Description |
Silicon N-Channel MOS Type
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| File Size |
278.58K /
7 Page |
View
it Online |
Download Datasheet |
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Toshiba
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| Part No. |
TPCA8057-H
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| OCR Text |
h 1 mosfets silicon n-channel mos (u-mos -h) tpca8057-h tpca8057-h tpca8057-h tpca8057-h 1. 1. 1. 1. applications applications applicat...q sw = 14 nc (typ.) (4) low drain-source on-resistance: r ds(on) = 2.6 m ? (typ.) (v gs = 4.5 v)... |
| Description |
Field Effect Transistor
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| File Size |
283.89K /
9 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPC8006-H
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| OCR Text |
h 2002-09-11 1 toshiba field effect transistor silicon n channel mos type (high speed u ? mosii) tpc8006 ? h high speed and high...q g ? 16 ? gate ? source charge q gs ? 12 ? gate ? drain (?miller?) charge q gd v dd 24 ... |
| Description |
Field Effect Transistor Silicon N Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Portable Equipment Applications Notebook PC Applications
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| File Size |
310.17K /
7 Page |
View
it Online |
Download Datasheet |
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