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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...TTOM 600 VDS L D R IV E R ID 20A 35A 50A RG VV 2 0GS D .U .T IA S tp 0 .0 1 + - VD D A 400 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 0 25 50 75 100 125 150 175 Starting TJ , Jun...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...J) 500 VDS L D R IV E R 400 TOP BOTTOM ID 18A 30A 43A RG VV 2 0GS D .U .T IA S tp + V - DD 300 A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 100 0 25 50 75 100 1...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ... TOP 400 VDS L D R IV E R BOTTOM ID 18A 30A 43A RG VV 2 0GS D .U .T IA S tp + V - DD 300 A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 100 0 25 50 75 100 125 150 175...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ... = 1mA m VGS = 10V, ID = 75A e V S A VDS = VGS, ID = 250A VDS = 25V, ID = 75A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C VG...Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowa...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ... 42A 60A VD S L D R IV E R RG 20V D .U .T IA S tp + V - DD 400 A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 175 V (B R )D S S tp Starting T , Junction Temperature(...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ... LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L www.irf.com 9 IRF1302S/IRF1302L TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 I...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

File Size 225.99K  /  11 Page

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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ...single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...A 16A 22A VDS L D R IV E R 600 RG 20V tp D .U .T IA S + V - DD 400 A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 0 25 50 75 100 125 150 175 Starting T J, Junction Tempera...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ...A 16A 22A VDS L D R IV E R 600 RG 20V tp D .U .T IA S + V - DD A 400 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 175 V (B R )D SS tp Starting T J , Junction Temp...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...6 7 V DS = 50V 2 0 s P U L S E W ID TH 8 9 10 0.0 -6 0 -4 0 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 V G S , G a te-to-S o urce V olta ge (V ) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

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