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    Samsung Electronic
Part No. M464S0424FTS
OCR Text ...liability. note : dc operating conditions and characteristics recommended operating conditions (voltage referenced to v ss = 0v, t a = 0 to 70 c) parameter symbol min typ max unit note supply voltage v dd 3.0 3.3 3.6 ...
Description 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet

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    Samsung Electronic
Part No. M464S0424ETS
OCR Text ...liability. note : dc operating conditions and characteristics recommended operating conditions (voltage referenced to v ss = 0v, t a = 0 to 70 c) parameter symbol min typ max unit note supply voltage v dd 3.0 3.3 3.6 ...
Description 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet

File Size 83.78K  /  11 Page

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    STK17TA8-RF45 STK17TA8-R35 STK17TA8-R35I STK17TA8-W45 STK17TA8-RF25 STK17TA8-WF25 STK17TA8-W35I STK17TA8-W25 STK17TA8-R2

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Electronic Theatre Controls, Inc.
Part No. STK17TA8-RF45 STK17TA8-R35 STK17TA8-R35I STK17TA8-W45 STK17TA8-RF25 STK17TA8-WF25 STK17TA8-W35I STK17TA8-W25 STK17TA8-R25I STK17TA8-R45 STK17TA8-W25I STK17TA8-W45I STK17TA8-RF35 STK17TA8-R45I STK17TA8-RF35I STK17TA8-WF35 STK17TA8-RF25I STK17TA8-WF35I STK17TA8-WF45I STK17TA8-WF25I STK17TA8-R STK17TA8-R25 STK17TA8-RF45I STK17TA8-W35 STK17TA8-WF45
OCR Text ...asheet refer to v ccx . ac test conditions capacitance f (t a = 25 c, f = 1.0mhz) note f: these parameters are guaranteed but not tested. symbol parameter commercial industrial units notes min max min max i cc 1 b average v cc current 70...
Description nvTime?/a> Event Data Recorder 128K x 8 AutoStore?/a> nvSRAM with Real-Time Clock Product Preview
nvTime Event Data Recorder 128K x 8 AutoStore nvSRAM with Real-Time Clock Product Preview
nvTimeEvent Data Recorder 128K x 8 AutoStorenvSRAM with Real-Time Clock Product Preview nvTime28K的事件数据记录器自动存储⑩8非易失的实时时钟产品预览

File Size 373.66K  /  22 Page

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    ST Microelectronics
Part No. STF24N60DM2
OCR Text ...ff states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v 1.5 a v ds = 600 v, t c =125 c 100 a ...
Description N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package

File Size 813.72K  /  13 Page

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    TOSHIBA
Part No. MT3S111P
OCR Text ...ficantly even if the operating conditions (i.e. operating temperature/current/v oltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook...
Description Radio-frequency SiGe Heterojunction Bipolar Transistor

File Size 172.13K  /  5 Page

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    STL73D-AP STL73 STL73D

STMicroelectronics
意法半导
Part No. STL73D-AP STL73 STL73D
OCR Text ...teristics symbol parameter test conditions min. typ. max. unit i cev collector cut-off current (v be = - 1.5 v) v ce = 700 v v ce = 700 v t c = 125 c 1 5 ma ma v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 10 ma 9 ...
Description High voltage fast-switching NPN power transistor

File Size 117.77K  /  9 Page

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    意法半导
Part No. STP5NB60 STP5NB60FP
OCR Text ...fied) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 600 v i dss zero g ate voltage drain current (v gs =0) v ds =maxrating v ds = max rating t c =125 o c 1 50 m a m a i...
Description N-Channel 600V-1.8Ω-5A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET)

File Size 108.21K  /  9 Page

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    Sharp Corporation
Part No. LZ21N3
OCR Text ... 3 lz21n3 recommended operating conditions parameter symbol min. typ. max. unit note ambient operating temperature t opr 25.0 ?c output transistor drain voltage v od 12.5 13.0 13.5 v notes : 1. use the circuit parameter indicated in "syste...
Description 1/2-type Interline Color CCD Area Sensor with 2 140 k Pixels

File Size 152.15K  /  19 Page

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