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  common-gate Datasheet PDF File

For common-gate Found Datasheets File :: 18352    Search Time::4ms    
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    Vishay Intertechnology,Inc.
Part No. J110
OCR Text ... 12 18 W V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-So...Gate-Source Cutoff Voltage rDS @ ID = 10 mA, VGS = 0 V IDSS @ VDS = 15 V, VGS = 0 V 1000 rDS(on)...
Description N-Channel JFET(最大导通电B>18Ω,夹断电B>20pA的N沟道结型场效应管)

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3799
OCR Text ...1-24 2SK3799 ID - VDS 10 COMMON SOURCE Tc = 25C PULSE TEST 10 6 5.5 6 5.25 20 COMMON SOURCE Tc = 25C PULSE TEST ID - VDS 15 ...GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) Yfs - ID 100 RDS (ON) - ID ...
Description Silicon N-Channel MOS Type Switching Regulator Applications

File Size 218.06K  /  6 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3798
OCR Text ...SK3798 ID - VDS 4 6 10 5.75 COMMON SOURCE Tc = 25C PULSE TEST 5.5 ID - VDS 8 COMMON SOURCE Tc = 25C PULSE TEST 6 6 10 DRAIN CURRE...GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) Yfs - ID FORWARD TRANSFER ...
Description Silicon N Channel MOS Type Switching Regulator Applications

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    TK12A60U

Toshiba Semiconductor
Part No. TK12A60U
OCR Text ...n ? source voltage v ds (v) common source tc = 25c pulse test i d ? v gs drain current i d (a) gate? source voltage v gs (v) v ds ? v gs drain? source voltage v ds (v) gate ? source voltage v gs (v) ...
Description    Field Effect Transistor Silicon N Channel MOS Type (DTMOS?

File Size 174.57K  /  6 Page

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    Fairchild Semiconductor Corporation
Part No. FOD3120 FOD3120TV FOD3120SD FOD3120SDV FOD3120TS FOD3120V FOD3120TSR2V FOD3120TSV FOD3120SV
OCR Text ...immunity, characterized by high common mode rejection. It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode optically co...Gate Drive Optocoupler Datasheet www.fairchildsemi.com/products/opto/ Applications In...
Description
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    TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3797
OCR Text ...4V 5V VGS = 4V 2 4 6 8 10 0 0 5 COMMON SOURCE Tc = 25C PULSE TEST 6.2V 30 10V ID - VDS 8V COMMON SOURCE Tc = 25C PULSE TEST DRAIN CUR...GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) Yfs - ID FORWARD TRANSIENT...
Description Silicon N-Channel MOS Type

File Size 216.89K  /  6 Page

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    P281

Polyfet RF Devices
Part No. P281
OCR Text ...nits test conditions gps h vswr common source power gai drain efficiency load mismatch toleranc db % relative 10 45 0.2 20:1 idq = idq = i...gate leakage curren gate bias for drain curren forward transconductanc saturation resistanc saturati...
Description    PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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    Microsemi
Part No. ARF477FL
OCR Text ...ir of rf power transistors in a common source con ? guration. it is designed for high voltage push-pull or parallel operation in ism and m...gate voltage 500 i d continuous drain current @ t c = 25c (each device) 15 a v gs gate-source v...
Description RF ISM VDMOS Power Transistors

File Size 136.50K  /  5 Page

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    Microsemi
Part No. ARF460AG ARF460BG
OCR Text common source rf power transistors designed for push-pull scienti ? c, commercial, medical and industrial rf power ampli ? er applicatio...gate voltage 500 i d continuous drain current @ t c = 25c 14 a v gs gate-source voltage 30 v p d...
Description RF ISM VDMOS Power Transistors

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    Microsemi
Part No. ARF449AG ARF449BG
OCR Text ...9b comprise a symmetric pair of common source rf power transistors designed for push-pull scientific, commercial, medical and industrial rf ...gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amper...
Description RF ISM VDMOS Power Transistors

File Size 115.01K  /  4 Page

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