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Vishay Intertechnology,Inc.
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Part No. |
J110
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OCR Text |
...
12
18
W V
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-So...Gate-Source Cutoff Voltage
rDS @ ID = 10 mA, VGS = 0 V IDSS @ VDS = 15 V, VGS = 0 V
1000 rDS(on)... |
Description |
N-Channel JFET(最大导通电B>18Ω,夹断电B>20pA的N沟道结型场效应管)
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File Size |
61.14K /
5 Page |
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it Online |
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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Part No. |
2SK3799
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OCR Text |
...1-24
2SK3799
ID - VDS
10 COMMON SOURCE Tc = 25C PULSE TEST 10 6 5.5 6 5.25 20 COMMON SOURCE Tc = 25C PULSE TEST
ID - VDS
15
...GATE-SOURCE VOLTAGE
VGS (V)
GATE-SOURCE VOLTAGE
VGS (V)
Yfs - ID
100
RDS (ON) - ID
... |
Description |
Silicon N-Channel MOS Type Switching Regulator Applications
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File Size |
218.06K /
6 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
2SK3798
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OCR Text |
...SK3798
ID - VDS
4 6 10 5.75 COMMON SOURCE Tc = 25C PULSE TEST 5.5
ID - VDS
8 COMMON SOURCE Tc = 25C PULSE TEST 6 6 10
DRAIN CURRE...GATE-SOURCE VOLTAGE
VGS
(V)
GATE-SOURCE VOLTAGE
VGS
(V)
Yfs - ID FORWARD TRANSFER ... |
Description |
Silicon N Channel MOS Type Switching Regulator Applications
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File Size |
219.08K /
6 Page |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
2SK3797
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OCR Text |
...4V 5V VGS = 4V 2 4 6 8 10 0 0 5 COMMON SOURCE Tc = 25C PULSE TEST 6.2V 30 10V
ID - VDS
8V COMMON SOURCE Tc = 25C PULSE TEST
DRAIN CUR...GATE-SOURCE VOLTAGE
VGS
(V)
GATE-SOURCE VOLTAGE
VGS
(V)
Yfs - ID FORWARD TRANSIENT... |
Description |
Silicon N-Channel MOS Type
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File Size |
216.89K /
6 Page |
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Microsemi
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Part No. |
ARF477FL
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OCR Text |
...ir of rf power transistors in a common source con ? guration. it is designed for high voltage push-pull or parallel operation in ism and m...gate voltage 500 i d continuous drain current @ t c = 25c (each device) 15 a v gs gate-source v... |
Description |
RF ISM VDMOS Power Transistors
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File Size |
136.50K /
5 Page |
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it Online |
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Microsemi
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Part No. |
ARF460AG ARF460BG
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OCR Text |
common source rf power transistors designed for push-pull scienti ? c, commercial, medical and industrial rf power ampli ? er applicatio...gate voltage 500 i d continuous drain current @ t c = 25c 14 a v gs gate-source voltage 30 v p d... |
Description |
RF ISM VDMOS Power Transistors
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File Size |
134.99K /
4 Page |
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it Online |
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Microsemi
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Part No. |
ARF449AG ARF449BG
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OCR Text |
...9b comprise a symmetric pair of common source rf power transistors designed for push-pull scientific, commercial, medical and industrial rf ...gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amper... |
Description |
RF ISM VDMOS Power Transistors
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File Size |
115.01K /
4 Page |
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it Online |
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Price and Availability
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