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0D101K JWM12BH1 GP30G 0234001 NSC5008A AM29F0 SEMICO 12030
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For ciss Found Datasheets File :: 30713    Search Time::1.093ms    
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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ... Qgd td(on) tr td(off) tf LD LS ciss Coss Crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    MTD120C10KQ8

Cystech Electonics Corp.
Part No. MTD120C10KQ8
OCR Text ...s v ds =10v, i d =2a dynamic ciss - 306 - coss - 42 - crss - 16 - pf v ds =20v, v gs =0, f=1mhz *td (on) - 6 - *tr - 7 - *td (off) - 29 - *tf - 13 - ns v ds =50v, i d =1a, v gs =10v, r g =6 *qg - 9 ...
Description P-Channel Logic Level Enhancement Mode MOSFET

File Size 322.09K  /  12 Page

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    RQJ0304DQDQA11 RQJ0304DQDQATL-H

Renesas Electronics Corporation
Part No. RQJ0304DQDQA11 RQJ0304DQDQATL-H
OCR Text ...0 v note3 input capacitance ciss ? 185 ? pf output capacitance coss ? 45 ? pf reverse transfer capacitance crss ? 25 ? pf v ds = ?10 v, v gs = 0, f = 1 mhz turn - on delay time t d(on) ? 18 ? ns rise time t r ?...
Description Silicon P Channel MOS FET Power Switching

File Size 104.94K  /  8 Page

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    RQJ0303PGDQATL-H RQJ0303PGDQA11

Renesas Electronics Corporation
Part No. RQJ0303PGDQATL-H RQJ0303PGDQA11
OCR Text ...10 v note3 input capacitance ciss ? 625 ? pf output capacitance coss ? 111 ? pf reverse transfer capacitance crss ? 83 ? pf v ds = ?10 v, v gs = 0, f = 1 mhz turn - on delay time t d(on) ? 18 ? ns rise time t r ? ...
Description Silicon P Channel MOS FET Power Switching

File Size 93.67K  /  7 Page

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    RQJ0302NGDQATL-H

Renesas Electronics Corporation
Part No. RQJ0302NGDQATL-H
OCR Text ...10 v note3 input capacitance ciss ? 195 ? pf output capacitance coss ? 42 ? pf reverse transfer capacitance crss ? 29 ? pf v ds = ?10 v, v gs = 0, f = 1 mhz turn - on delay time t d(on) ? 19 ? ns rise time t r ...
Description Silicon P Channel MOS FET Power Switching

File Size 77.27K  /  7 Page

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    MTB20C03J4

Cystech Electonics Corp.
Part No. MTB20C03J4
OCR Text ...i d =1a, v gs =10v, r g =6 ciss - 715 - coss - 78 - crss - 69 - pf v gs =0v, v ds =15v, f=1mhz source-drain diode i s *1 - - 2.3 i sm *2 - - 9.2 a v sd *1 - - 1.2 v i f =i s , v gs =0v trr *1 ...
Description N & P-Channel Enhancement Mode Power MOSFET

File Size 293.44K  /  13 Page

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    RJK03P7DPA-00-J5A

Renesas Electronics Corporation
Part No. RJK03P7DPA-00-J5A
OCR Text ...5 v note4 input capacitance ciss ? 850 1190 pf output capacitance coss ? 150 ? pf reverse transfer capacitance crss ? 80 ? pf v ds = 10 v v gs = 0 f = 1mhz gate resistance rg ? 1.55 3.1 ? total gate charge qg...
Description MOS2 30 V, 30 A, 5.3 m max. High Speed Power Switching

File Size 259.83K  /  11 Page

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    RJK03P6DPA RJK03P6DPA-00-J5A

Renesas Electronics Corporation
Part No. RJK03P6DPA RJK03P6DPA-00-J5A
OCR Text ...5 v note4 input capacitance ciss ? 850 1190 pf output capacitance coss ? 150 ? pf reverse transfer capacitance crss ? 80 ? pf v ds = 10 v v gs = 0 f = 1mhz gate resistance note5 rg ? 1.55 3.1 ? total gate cha...
Description Built in SBD Dual N-channel Power MOS FET High Speed Power Switching

File Size 239.43K  /  11 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...Qgd td on tr td off tf Ld Ld Ls ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Forward transconductance Gate source leakage current Zero gate voltage drain current Total gate charge Gat...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ... Qgd td(on) tr td(off) tf LD LS ciss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Intern...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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