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  C14N32P-C2A Datasheet PDF File

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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4N51163QC-ZC2A
Description ; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM
512Mbit gDDR2 SDRAM

File Size 1,416.01K  /  64 Page

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HUA FENG CIRCUIT





    SAMSUNG[Samsung semiconductor]
Part No. K4N51163QC-ZC36 K4N51163QC-ZC K4N51163QC-ZC25 K4N51163QC-ZC2A K4N51163QC-ZC33
Description 512Mbit gDDR2 SDRAM

File Size 1,403.46K  /  64 Page

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    ECLIPTEK CORP
Part No. ECM2A4C2A10-34.400M
Description QUARTZ CRYSTAL RESONATOR, 34.4 MHz

File Size 122.05K  /  4 Page

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    K4D263238E K4D263238E-GC25 K4D263238E-GC2A K4D263238E-GC33 K4D263238E-GC36 K4D263238E-GC40 K4D263238E-GC45

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4D263238E K4D263238E-GC25 K4D263238E-GC2A K4D263238E-GC33 K4D263238E-GC36 K4D263238E-GC40 K4D263238E-GC45
Description 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 17.88Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 300mW 17.9Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 300mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL

File Size 308.67K  /  17 Page

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    0010845061 10-84-5061 42002-06C2A1 A-42002-06C2A1

Molex Electronics Ltd.
Part No. 0010845061 10-84-5061 42002-06C2A1 A-42002-06C2A1
Description 6.35mm (.250) Pitch MLX Power Connector Receptacle, 2.13mm (.084) Contact Diameter, Vertical, PCT Polyester, Tin (Sn), White, 6 Circuits

File Size 361.71K  /  4 Page

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    42002-09C2A1 A-42002-9C2A1 0010845091 10-84-5091

Molex Electronics Ltd.
Part No. 42002-09C2A1 A-42002-9C2A1 0010845091 10-84-5091
Description 6.35mm (.250) Pitch MLX Power Connector Receptacle, 2.13mm (.084") Contact Diameter, Vertical, PCT Polyester, Tin (Sn), White, 9 Circuits
6.35mm (.250) Pitch MLX Power Connector Receptacle, 2.13mm (.084) Contact Diameter, Vertical, PCT Polyester, Tin (Sn), White, 9 Circuits

File Size 361.72K  /  4 Page

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    K4D261638E K4D261638E-TC40 K4D261638E-TC33 K4D261638E-TC36 K4D261638E-TC50 K4D261638E-TC2A K4D261638E-TC2A0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4D261638E K4D261638E-TC40 K4D261638E-TC33 K4D261638E-TC36 K4D261638E-TC50 K4D261638E-TC2A K4D261638E-TC2A0
Description 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 200万16 × 4,银行双数据速率同步DRAM

File Size 213.19K  /  16 Page

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Part No. NAND04GX3C2A
Description 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

File Size 421.50K  /  51 Page

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    SPBT2532C2AT SPBT2532C2.AT

STMicroelectronics
Part No. SPBT2532C2AT SPBT2532C2.AT
Description Bluetooth technology class-2 module

File Size 829.62K  /  48 Page

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    K4D551638D K4D551638D-TC K4D551638D-TC2A K4D551638D-TC33 K4D551638D-TC50 K4D551638D-TC36 K4D551638D-TC40 K4D551638D-TC45

Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4D551638D K4D551638D-TC K4D551638D-TC2A K4D551638D-TC33 K4D551638D-TC50 K4D551638D-TC36 K4D551638D-TC40 K4D551638D-TC45 K4D551638D-TC60
Description 256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
CABLE ASSEMBLY; 2.9mm MALE TO 2.9mm MALE; 40 GHz CABLE 56Mbit GDDR SDRAM内存

File Size 228.34K  /  18 Page

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