|
|
 |

MOTOROLA[Motorola, Inc] Motorola, Inc. ON SEMICONDUCTOR
|
Part No. |
MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D
|
OCR Text |
...ed Device
TMOS POWER FET 3.0 amperes 1000 VOLTS RDS(on) = 4.0 OHM
(R)
D
CASE 221A-06, Style 5 TO-220AB
MAXIMUM RATINGS (TC = ...1600 Crss 1200 800
VDS = 0 V
10000 VGS = 0 V TJ = 25C 1000 Ciss C, CAPACITANCE (pF) VGS = 0 V ... |
Description |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 3.0 amperes 1000 VOLTS RDS(on) = 4.0 OHM 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
File Size |
206.08K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ON Semi
|
Part No. |
MTP6P20E_D MTP6P20E ON2638
|
OCR Text |
...ed Device
TMOS POWER FET 6.0 amperes 200 VOLTS RDS(on) = 1.0 OHM
(R)
D
G S CASE 221A-06, Style 5 TO-220AB
MAXIMUM RATINGS (TC...1600 C, CAPACITANCE (pF)
VDS = 0 V
VGS = 0 V
TJ = 25C
1200
Crss
800
Ciss Coss C... |
Description |
From old datasheet system TMOS POWER FET 6.0 amperes 200 VOLTS RDS(on) = 1.0 OHM
|
File Size |
215.85K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
ON Semi
|
Part No. |
MTP6P20E_D ON2637
|
OCR Text |
...ed Device
TMOS POWER FET 6.0 amperes 200 VOLTS RDS(on) = 1.0 OHM
(R)
D
G S CASE 221A-06, Style 5 TO-220AB
MAXIMUM RATINGS (TC...1600 C, CAPACITANCE (pF)
VDS = 0 V
VGS = 0 V
TJ = 25C
1200
Crss
800
Ciss Coss C... |
Description |
TMOS POWER FET 6.0 amperes 200 VOLTS From old datasheet system
|
File Size |
184.59K /
8 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|