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  9ns Datasheet PDF File

For 9ns Found Datasheets File :: 709    Search Time::2.329ms    
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    Samsung Electronic
Part No. M368L3313CT1
OCR Text ...signal input setup time 1.1ns 0.9ns 0.9ns 0.8ns b0h 90h 90h 80h 33 command and address signal input hold time 1.1ns 0.9ns 0.9ns 0.8ns b0h 90h 90h 80h 34 data signal input setup time 0.6ns 0.5ns 0.5ns 0.45ns 60h 50h 50h 45h serial presence...
Description 32Mx64 DDR SDRAM 184pin DIMM based on 16Mx8 Serial Presence Detect

File Size 66.63K  /  3 Page

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    Samsung Electronic
Part No. M381L3313BT1
OCR Text ...signal input setup time 1.1ns 0.9ns 0.9ns b0h 90h 90h 33 command and address signal input hold time 1.1ns 0.9ns 0.9ns b0h 90h 90h 34 data signal input setup time 0.6ns 0.5ns 0.5ns 60h 50h 50h serial presence detect rev. 0.4 jan. 2001 18...
Description 32Mx72 DDR SDRAM 184pin DIMM based on 16Mx8 Data Sheet

File Size 21.25K  /  3 Page

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    Samsung Electronic
Part No. M383L1713BT1
OCR Text ...signal input setup time 1.1ns 0.9ns 0.9ns b0h 90h 90h 33 command and address signal input hold time 1.1ns 0.9ns 0.9ns b0h 90h 90h 34 data signal input setup time 0.6ns 0.5ns 0.5ns 60h 50h 50h serial presence detect rev. 0.4 jan. 2001 184...
Description 32Mx72 DDR SDRAM 184pin DIMM based on 16Mx8 Serial Presence Detect

File Size 21.36K  /  3 Page

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    HY57V161610FTP-XX HY57V161610FT-XX HY57V161610FT-5 HY57V161610FT-7

Hynix Semiconductor
Part No. HY57V161610FTP-XX HY57V161610FT-XX HY57V161610FT-5 HY57V161610FT-7
OCR Text ...es at cas latency=2 and tck2=8.9ns 3. v dd (min) of hy57v161610et-5 is 3.15v 4. hy57v161610ft(p) series: leaded, commercial temperature(0 o c ~ 7 0 o c .) 5. hy57v161610ft(p)-xxi series: lead free, industrial tempe...
Description 16M SDRAM
16Mb Synchronous DRAM

File Size 148.05K  /  13 Page

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    Samsung Electronic
Part No. M368L0914BT1
OCR Text ...signal input setup time 1.1ns 0.9ns 0.9ns b0h 90h 90h 33 command and address signal input hold time 1.1ns 0.9ns 0.9ns b0h 90h 90h 34 data signal input setup time 0.6ns 0.5ns 0.5ns 60h 50h 50h serial presence detect rev. 0.4 jan. 2001 184...
Description 8M x 64 DDR SDRAM 184pin DIMM based on 8Mx16 Serial Presence Detect

File Size 21.39K  /  3 Page

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    MSM56V16160F

OKI electronic componets
Part No. MSM56V16160F
OCR Text ...ac2 t ac3 msm56v16160f-8 125mhz 9ns 6ns msm56v16160f-10 100mhz 9ns 9ns this version : sep.1999 msm56v16160f 2/30 pin configration (top view) pin name function pin name function clk system clock udqm, ldqm data input/output mask cs chip se...
Description 2-Bank x 524288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM

File Size 2,990.28K  /  31 Page

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    Samsung Electronic
Part No. M368L3223BT1
OCR Text ...signal input setup time 1.1ns 0.9ns 0.9ns b0h 90h 90h 33 command and address signal input hold time 1.1ns 0.9ns 0.9ns b0h 90h 90h 34 data signal input setup time 0.6ns 0.5ns 0.5ns 60h 50h 50h serial presence detect rev. 0.4 jan. 2001 18...
Description 32Mx64 DDR SDRAM 184pin DIMM based on 32Mx8 Data Sheet

File Size 21.40K  /  3 Page

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    Micron Technology, Inc.
Part No. MT28S4M16LC
OCR Text ...00 mhz C 7ns 3ns 2ns -10 66 mhz 9ns C 3ns 2ns -12 83 mhz C 9ns 3ns 2ns -12 66 mhz 10ns C 3ns 2ns *cl = cas (read) latency the mt28s4m16lc is a nonvolatile, electrically sec- tor-erasable (flash), programmable memory contain- ing 67,108,864 ...
Description SYNCFLASH MEMORY

File Size 973.26K  /  48 Page

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    LTC5564 LTC5505 LTC5507 LTC5508 LTC5509 LTC55641 LTC5581 LTC5582 LTC5583 LTC5587 LT5570

Linear Technology
Part No. LTC5564 LTC5505 LTC5507 LTC5508 LTC5509 LTC55641 LTC5581 LTC5582 LTC5583 LTC5587 LT5570
OCR Text ...ier. the comparator provides a 9ns response time to input levels exceeding v ref along with a latch enable/disable function. the gain selectable operational amplifier provides a 350v/s slew rate and 75mhz of demodulation bandwidth to t...
Description UltraFast?/a> 7ns Response Time 15GHz RF Power Detector with Comparator
UltraFast 7ns Response Time 15GHz RF Power Detector with Comparator

File Size 217.16K  /  14 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KBE00G003M-D411 KBE00G003M-D4110
OCR Text ...lash 50ns mobile sdram 9ns mobile sdram 9ns sdram interface, density, voltage, organization, option 3 = m-sdr, 256m+256m, 1.8v/1.8v, x16 u t ram density, voltage, organization 0 = none package d = fbga(lead-free) nand fla...
Description NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107

File Size 1,254.33K  /  89 Page

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For 9ns Found Datasheets File :: 709    Search Time::2.329ms    
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