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Inchange Semiconductor
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| Part No. |
BUX31 BUX31A BUX31B
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| OCR Text |
...tion voltage i c = 4a; i b = 0.8a b 1.0 v v ce( sat )-2 collector-emitter saturation voltage i c = 8a; i b = 2a b 2.0 v v be...800v;v be = -1.5v v ce = 800v;v be = -1.5v,t c =125 0.1 1.0 bux31a v ce = 900v;v be = -1.5v v... |
| Description |
Silicon NPN Power Transistor
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| File Size |
105.34K /
2 Page |
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意法半导
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| Part No. |
TN8
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| OCR Text |
8a SCRs
SENSITIVE & STANDARD
MAIN FEATURES:
Symbol IT(RMS) VDRM/VRRM IGT Value 8 600 to 1000 0.2 to 15 Unit
G
A
A
K
V mA
...800v
TS
SENSITIVE SCR SERIES CURRENT: 8a
8 20 -
600 B (-TR)
PACKAGE: B: DPAK H: IPAK T: T... |
| Description |
8a SCRs
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| File Size |
116.94K /
9 Page |
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Infineon
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| Part No. |
IHP10T120
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| OCR Text |
...v 1,0v 1,5v 2,0v 2,5v 3,0v i c =8a i c =15a i c =5a i c =2.5a v ge , gate-emitter voltage t j , junction temperature figure 7. ty...800v 0mj 1mj 2mj 3mj e ts * e on * *) e on and e ts include losses due to diode recovery e ... |
| Description |
IGBTs & DuoPacks - 10A / 1200V IGBT and 4A / 1200V Diode in DuoPack
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| File Size |
332.27K /
14 Page |
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Sanyo
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| Part No. |
2SC3153
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| OCR Text |
...
ton tstg tf
IC=4A, IB1=0.8a, IB2=-1.6A, RL=100, IC=4A, IB1=0.8a, IB2=-1.6A, RL=100, IC=4A, IB1=0.8a, IB2=-1.6A, RL=100,
VCC=400V VCC=400V VCC=400V
Switching Time Test Circuit
No.1072-2/4
2SC3153
No.1072-3/4
2SC3153
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| Description |
NPN Triple Diffused Planar Silicon Transistor 800v/6A Switching Regulator Applications
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| File Size |
96.84K /
4 Page |
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Sanyo
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| Part No. |
2SC3552
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| OCR Text |
... IE=0 VEB=5V, IC=0 VCE=5V, IC=0.8a VCE=5V, IC=4A VCE=10V, IC=0.8a VCB=10V, f=1MHz 10* 8 15 215 MHz pF Conditions Ratings min typ max 10 10 40* Unit A A
* : The hFE1 of the 2SC3552 is classified as follows. When specifying the hFE1 rank, ... |
| Description |
NPN Triple Diffused Planar Silicon Transistor
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| File Size |
119.88K /
4 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF5N80
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| OCR Text |
...
TM
Features
* * * * * * 2.8a, 800v, RDS(on) = 2.6 @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!
"
G! GD S
3
" "
5
TO-220F
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| Description |
800v N-Channel MOSFET
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| File Size |
647.94K /
8 Page |
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ST Microelectronics
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| Part No. |
STIL
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| OCR Text |
...av) = 6a 0.75 0.9 i out(av) = 8a 0.75 0.9 r d dynamic resistance for one power switch i out(av) = 4a t j = 150c 55 80 m ? i out(av) =...800v stil04 v r(out) =400v t (c) j i on(a) r(out) 1.0 10.0 100.0 0 25 50 75 100 125 150 stil04 i pt1... |
| Description |
AC INRUSH CURRENT LIMITER
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| File Size |
177.29K /
11 Page |
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it Online |
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Price and Availability
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