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80a 40v Datasheet PDF File

For 80a 40v Found Datasheets File :: 345 Search Time::1.437ms
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				Fairchild Semiconductor
Part No.	FDP8441
OCR Text	80a, 2.7m Features Typ rDS(on) = 2.1m at VGS = 10V, ID = 80a Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant FREE I Applicati...
Description	N-Channel PowerTrench MOSFET (40v, 80a, 2.7mohm)
File Size	277.95K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IKW50N60T Q67040S4718
OCR Text	... IC, COLLECTOR CURRENT 100A 80a T C =80C T C =110C IC, COLLECTOR CURRENT 10s 10A 50s 60A 40A 20A 0A 100H z Ic 1m...40v QGE, GATE CHARGE Figure 17. Typical gate charge (IC=50 A) VCE, COLLECTOR-EMITTER VOLTAGE F...
Description	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	413.27K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040S4717 IKW30N60T
OCR Text	... TrenchStop Series 100A 90A 80a IKW30N60T q t p=2s 10s IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 70A 60A 50A 40A 30A 20A ...40v QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A) VCE, COLLECTOR-EMITTER VOLTAGE F...
Description	600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode 低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极 From old datasheet system
File Size	394.33K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T
OCR Text	... TrenchStop Series 100A 90A 80a IGP30N60T IGW30N60T t p=2s 10s IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 70A 60A 50A 40A ...40v QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A) VCE, COLLECTOR-EMITTER VOLTAGE F...
Description	1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
File Size	375.15K / 12 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	SSS2N60A
OCR Text	...ooC < < 3 _ O ISD < 2A, di/dt _ 80a/ s, VDD _ BVDSS , Starting T J =25 C _ 4 O Pulse Test : Pulse Width = 250 s, Duty Cycle < 2% 5 Essential...40v 8 DS [pF] C iss 30 0 VGS , Gate-Source Voltage 40 0 Crss= Cgd Capacitance 2...
Description	Advanced Power MOSFET
File Size	262.78K / 7 Page	View it Online	Download Datasheet

				MCC[Micro Commercial Components]
Part No.	1N5820 1N5822 1N5821
OCR Text	...Current Peak Forward Surge IFSM 80a 8.3ms, half sine Current Maximum Instantaneous Forward Voltage .475V IFM = 3.0A; 1N5820 VF .500V 1N5821 TJ = 25C* .525V 1N5822 Maximum DC 2.0mA Reverse Current At IR TJ = 25C 20mA Rated DC Blocking TJ = 1...
Description	3 Amp Schottky Barrier Rectifier 20 - 40 Volts
File Size	44.83K / 3 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDB8442
OCR Text	80a, 2.9m Features Typ rDS(on) = 2.1m at VGS = 10V, ID = 80a Typ Qg(10) = 181nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant REE I DF Applica...
Description	N-Channel PowerTrench MOSFET
File Size	273.16K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Powerex Power Semiconductors
Part No.	FS50SMJ-2
OCR Text	...se Test 4 80 3 ID = 80a 60 VGS = 4V 10V 2 50A 40 1 20A 20 0 0 0 2 4 6 8 10 3 5 7 100 2...40v 80V 40 TC = 125C 75C 25C 2 20 0 0 20 40 60 80 100 0 0 0....
Description	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	46.13K / 4 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPB100N04S2-04 SPP100N04S2-04
OCR Text	...state resistance V GS=10V, I D=80a V GS=10V, I D=80a, SMD version 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 210A at 25C, for detailed information see app.-note ANPS071E available at www.infineon...
Description	Low Voltage MOSFETs - TO220/263; 100A; 40v; NL;3.6mohm OptiMOS Power-Transistor
File Size	311.26K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPB100N04S2L-03 SPP100N04S2L-03
OCR Text	...lanche energy, single pulse ID=80a, V DD=25V, RGS=25 Repetitive avalanche energy, limited by Tjmax 2) Reverse diode dv/dt IS=100A, VDS=...40v, VGS=0V, Tj=25C V DS=40v, VGS=0V, Tj=125C A 0.01 1 1 1 100 100 nA m 3.1 2.9 2.6 2.3 4.4 4.1 3...
Description	Low Voltage MOSFETs - TO220/263; 100A; 40v; LL;3.3mohm OptiMOS Power-Transistor
File Size	308.76K / 8 Page	View it Online	Download Datasheet

For 80a 40v Found Datasheets File :: 345 Search Time::1.437ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |