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Microsemi
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Part No. |
APTM50H14FT3G
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OCR Text |
...c 525 ns t j = 25c 1.6 q rr reverse recovery charge i s = - 26a v r = 333v di s /dt = 100a/s t j = 125c 6 c ? dv/dt numbers reflect the limitations of the circuit rather than the device itself. i s ? - ... |
Description |
Full Bridge
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File Size |
421.37K /
7 Page |
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International Rectifier, Corp.
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Part No. |
JANSF2N7269
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OCR Text |
...40 l s + l d total inductance 6.8 c iss input capacitance 4700 v gs = 0v, v ds = 25v c oss output capacitance 850 pf f = 1.0mhz c r...26a, v gs = 0v ? t rr reverse recovery time 820 ns t j = 25c, i f = 26a, di/dt 3 100a/ m s q... |
Description |
200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 20000kRad高可靠性单N沟道MOSFET的工贸硬化在TO - 254AA封装
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File Size |
271.96K /
12 Page |
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it Online |
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STMICROELECTRONICS Integrated Device Technology, Inc. SGS Thomson Microelectronics
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Part No. |
STU26NM60 STU26NM60I
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OCR Text |
...tw26nm60, stu26nm60, stu26nm60i 6/11 normalized gate threshold voltage vs temp. source-drain diode forward characteristics normalized on resistance vs temperature
7/11 stw26nm60, stu26nm60, stu26nm60i fig. 5: test circuit for inductive lo... |
Description |
26 A, 600 V, 0.135 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 26A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 600V的五(巴西)直|6A条(丁)|20VAR N-CHANNEL 600V 0.125 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET
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File Size |
134.07K /
11 Page |
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it Online |
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Price and Availability
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