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  48m Datasheet PDF File

For 48m Found Datasheets File :: 4955    Search Time::1.39ms    
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    MH16S72BAMD-10 MH16S72BAMD-7 MH16S72BAMD-8 B98041_A

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH16S72BAMD-10 MH16S72BAMD-7 MH16S72BAMD-8 B98041_A
OCR Text ...referenced to clock rising edge 4 bank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4/8/Full Page(programmable) Burst type- sequential / interleave(programmable) Column access - random Auto p...
Description From old datasheet system
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM

File Size 589.26K  /  55 Page

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    MH16S72BAMD-6 B99030

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH16S72BAMD-6 B99030
OCR Text ...referenced to clock rising edge 4-bank operation controlled by BA0,BA1(Bank Address) /CAS latency -2/3(programmable,at buffer mode) LVTTL Interface Burst length 1/2/4/8/Full Page(programmable) Burst type- Sequential and interleave burst (pr...
Description From old datasheet system
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 579.21K  /  40 Page

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    MH16S72DAMD-6 MH16S72DAMD-7 MH16S72DAMD-8 B99057

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH16S72DAMD-6 MH16S72DAMD-7 MH16S72DAMD-8 B99057
OCR Text ...referenced to clock rising edge 4 bank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4/8/Full Page(programmable) Burst type- sequential / interleave(programmable) Column access - random Auto p...
Description From old datasheet system
1207959552-BIT (16777216 - WORD BY 72-BIT)Synchronous DRAM

File Size 714.25K  /  55 Page

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    Q67100-Q2099 HYM328025GS-60 HYM328025GS-50 HYM328025S-60 HYM328025S-50 Q67100-Q2098 Q67100-Q2330 HYM328025S

Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
Part No. Q67100-Q2099 HYM328025GS-60 HYM328025GS-50 HYM328025S-60 HYM328025S-50 Q67100-Q2098 Q67100-Q2330 HYM328025S
OCR Text ...sing sixteen HYB 5117405BJ 4M x 4 DRAMs in 300 mil wide SOJ-packages mounted together with sixteen 0.2 F ceramic decoupling capacitors on a ...8M x 32-Bit EDO-Module Pin Configuration Pin Names VSS DQ16 DQ17 DQ18 DQ19 N.C. A1 A3 A5 A10 ...
Description 8M x 32 Bit DRAM Module
8M x 32-Bit EDO-DRAM Module

File Size 55.87K  /  11 Page

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    TDA7469 TDA746913TR

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. TDA7469 TDA746913TR
OCR Text ...-L OUT-L PVS-L SDA SCL 1 2 3 4 5 6 7 8 9 10 11 12 D01AU1246 24 23 22 21 20 19 18 17 16 15 14 13 CREF IN1-R IN2-R MUX-R TREBLE-R BA...8m 10m 12m 14m 16m 18m 20m Vcc = 2.5V Rload = 32ohm f = 1KHz Pout (W) Pout (W) Figure 6....
Description LOW VOLTAGE ANALOG AUDIO PROCESSOR WITH HEADPHONE POWER AMPLIFIER

File Size 263.49K  /  13 Page

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    YGV619

ETC
LSI Computer Systems
YAMAHA
Part No. YGV619
OCR Text ...ks x 1 pc. 1M words x 16 bits x 4 banks x 1 pc. 2M words x 16 bits x 2 banks x 1 pc. *32 bit bus 512k words x 16 bits x 2 banks x 2 pcs. 512...8M bytes) (capacity: 8M bytes) (capacity: (capacity: (capacity: (capacity: 4M bytes) 8M bytes) 16M b...
Description    Advanced Video Display Processor 6
3.3V Advanced video display processor 6

File Size 336.13K  /  15 Page

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    BYW29F200 BYW29200 BYW29 BYW29-200 BYW29F-200 BYW29F

意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
Part No. BYW29F200 BYW29200 BYW29 BYW29-200 BYW29F-200 BYW29F
OCR Text ... T IM P=10W =tp/T tp 4 2 IF(av)(A) =tp/T tp 60 40 P=5W P=15W 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0 1...8m.N Maximum torque value : 1.0m.N Information furnished is believed to be accurate and reliable....
Description HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

File Size 71.16K  /  6 Page

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