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  40v-200v Datasheet PDF File

For 40v-200v Found Datasheets File :: 1388    Search Time::1.078ms    
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    IRF7464

IRF[International Rectifier]
Part No. IRF7464
OCR Text ...72A VDS = 160V VDS = 100V VDS = 40V VGS , Gate-to-Source Voltage (V) 16 1000 C, Capacitance(pF) Ciss 100 12 Coss 10 8 Crss 4 1 1 10 100 1000 0 0 2 4 6 FOR TEST CIRCUIT SEE FIGURE 13 8 10 12 14 VD...
Description Power MOSFET(Vdss=200V, Rds(on)max=0.73ohm, Id=1.2A)

File Size 165.91K  /  8 Page

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    HV20320 HV20320PJ HV20220 HV20220FG HV20220GA HV20220P HV20220PJ HV20220X

Supertex, Inc.
Supertex Inc
SUTEX[Supertex Inc]
SUTEX[Supertex, Inc]
Part No. HV20320 HV20320PJ HV20220 HV20220FG HV20220GA HV20220P HV20220PJ HV20220X
OCR Text ...5mA ISIG = 5mA ISIG = 5mA VPP = 40V, VPP = 100V, VPP = 160V, ISIG = 200mA VNN = -160V ISIG = 200mA VNN = -100V ISIG = 200mA VNN = -40V IS...200V -40V to -160V VDD -1.5V to VDD 0V to 1.5V VNN +10V to VPP -10V2 0C to 70C Positive high volt...
Description Low Charge Injection 8-Channel High Voltage Analog Switch 低电荷注入,8通道,高压模拟开

File Size 354.43K  /  12 Page

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    HV20720 HV20720PJ HV20720X

Supertex Inc
SUTEX[Supertex, Inc]
Part No. HV20720 HV20720PJ HV20720X
OCR Text ...ing free air-temperature +200V +40V to VNN + 200V -40V to -160V +4.75V to +5.25V VDD -1.5V to VDD 0V to 1.5V VNN +10V to VPP -10V 0C to 70C Value Notes: 1 Power up/down sequence is arbitrary except GND must be powered-up first and powere...
Description Dual 1 of 4 High Voltage Analog Switch

File Size 310.65K  /  5 Page

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    IRF634A IRF634

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF634A IRF634
OCR Text ...0V,TC=125C VGS=10V,ID=4.05A VDS=40V,ID=4.05A (4) (4) VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=125V,ID=8.1A, RG=12 See Fig 13 VDS=200V,VGS=10V, ID=8.1A (4) (5) See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Charac...
Description Advanced Power MOSFET

File Size 222.50K  /  7 Page

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    IRF634B IRFS634B IRF634BFP001

Samsung semiconductor
FAIRCHILD[Fairchild Semiconductor]
Part No. IRF634B IRFS634B IRF634BFP001
OCR Text ... 25 C -55 C Notes : 1. VDS = 40V 2. 250 s Pulse Test o o Notes : 1. 250 s Pulse Test 2. TC = 25 10 -1 10 -1 10 ...200V Capacitance [pF] 1000 Coss 6 Crss 500 4 Notes : 1. VGS = 0 V 2. f = 1 MH...
Description 250V N-Channel B-FET / Substitute of IRF634 & IRF634A
250V N-Channel MOSFET

File Size 856.87K  /  10 Page

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    NDL2405S NDL0505S NDL0509S NDL0512S NDL0515S NDL2412S NDL2415S NDL2409S NDL4815S NDL NDL1205S NDL1209S NDL1212S NDL1215S

CANDD[C&D Technologies]
http://
Part No. NDL2405S NDL0505S NDL0509S NDL0512S NDL0515S NDL2412S NDL2415S NDL2409S NDL4815S NDL NDL1205S NDL1209S NDL1212S NDL1215S NDL4805S NDL4809S NDL4812S
OCR Text ...es continuous 300C 10mA 10V 20V 40V 80V www.dc-dc.com 1 Refer to power derating graph for operation of 5V input types at 4.5 to 6V. 2 ...200V Philips Part No.15162109 6 7 Input Voltage (V) 8 9 MECHANICAL DIMENSIONS 21.80 ...
Description Isolated 2W Wide Input Single Output DC-DC Converters 1-OUTPUT 2 W DC-DC REG PWR SUPPLY MODULE

File Size 198.81K  /  2 Page

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    FR304GP FR305GP FR302GP FR303GP FR307GP FR301GP FR306GP

MCC[Micro Commercial Components]
Part No. FR304GP FR305GP FR302GP FR303GP FR307GP FR301GP FR306GP
OCR Text ...00V Maximum RMS Voltage 35V 70V 40V 280V 420V 560V 700V Maximum DC Blocking Voltage 50V 100V 200V 400V 600V 800V 1000V D --------------- A Cathode Mark B Electrical Characteristics @ 25C Unless Otherwise Specified Average Forwa...
Description 3 Amp Fast Recovery Rectifier 50 to 1000 Volts

File Size 79.42K  /  3 Page

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    IRFD210 FN2316

INTERSIL[Intersil Corporation]
Part No. IRFD210 FN2316
OCR Text ...GE (V) ID = 2.5A 15 VDS = 40V VDS = 100V VDS = 160V 10 5 0 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS ...
Description 600 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET
From old datasheet system

File Size 51.89K  /  6 Page

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    2SK3340-01 K3340-01

FUJI ELECTRIC CO LTD
FUJI[Fuji Electric]
Part No. 2SK3340-01 K3340-01
OCR Text ...) Source(S) *1 L=1.89mH, Vcc=40V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget...200V ID=23A VGS=10V L=1.89mH Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C ...
Description N-CHANNEL SILICON POWER MOS-FET

File Size 84.53K  /  4 Page

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