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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH32S72APHB-8 MH32S72APHB-6 MH32S72APHB-7 B00007
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| OCR Text |
...referenced to clock rising edge 4 bank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4/8/Full Page(programmable) Burst type- sequential / interleave(programmable) Column access - random Auto p... |
| Description |
From old datasheet system
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
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| File Size |
699.48K /
55 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH32S64PHB-8 MH32S64PHB-10 MH32S64PHB-7 B99016
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| OCR Text |
...referenced to clock rising edge 4 bank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4/8/Full Page(programmable) Burst type- sequential / interleave(programmable) Column access - random Auto p... |
| Description |
From old datasheet system
214683648-bit (3354432- WORD BY 64-BIT)SynchronousDRAM
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| File Size |
590.33K /
55 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH32S64APHB-8 MH32S64APHB-6 MH32S64APHB-7
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| OCR Text |
...referenced to clock rising edge 4 bank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4/8/Full Page(programmable) Burst type- sequential / interleave(programmable) Column access - random Auto p... |
| Description |
2,147,483,648-bit (33,554,432 - WORD BY 64-BIT)Synchronous DRAM
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| File Size |
695.58K /
55 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH32S64APFB-8 MH32S64APFB-7
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| OCR Text |
...referenced to clock rising edge 4 bank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4/8/Full Page(programmable)
FEATURES
Frequency -7,-7L -8,-8L 100MHz 100MHz CLK Access Time
(Component ... |
| Description |
2147483648-bit (33554432 - WORD BY 64-BIT)SynchronousDRAM
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| File Size |
696.32K /
55 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH16S72PJB-8 MH16S72PJB-7 B99019
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| OCR Text |
...VTTL Interface Burst length 1/2/4/8/Full Page(programmable) Burst Write / Single Write(programmable) Auto precharge / All bank precharge controlled by A10 Auto refresh and Self refresh 4096 refresh cycles every 64ms Discrete IC and module d... |
| Description |
From old datasheet system
1207959552-BIT ( 16777216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
730.31K /
56 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH16S72PHC-8 MH16S72PHC-10 MH16S72PHC-7
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| OCR Text |
...referenced to clock rising edge 4 bank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4/8/Full Page(programmable) Burst type- sequential / interleave(programmable) Column access - random Auto p... |
| Description |
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
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| File Size |
588.26K /
55 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH16S72DDFA-8 MH16S72DDFA-7 B99058
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| OCR Text |
...ighteen industry standard 16M x 4 Sy nchronous DRAMs in TSOP. The TSOP on a card edge dual in-line package prov ides any application where h...8
100MHz 100MHz
6ns (CL = 2, 3) 6ns (CL = 3)
Utilizes industry standard 16M X 4 Synchronous... |
| Description |
From old datasheet system
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
920.46K /
56 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH16S72BDFA-8 MH16S72BDFA-7
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| OCR Text |
...ighteen industry standard 16M x 4 Sy nchronous DRAMs in TSOP. The TSOP on a card edge dual in-line package prov ides any application where h...8
100MHz 100MHz
6ns (CL = 2, 3) 6ns (CL = 3)
Utilizes industry standard 16M X 4 Synchronous... |
| Description |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
954.24K /
56 Page |
View
it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH16S72APHB-8 MH16S72APHB-6 MH16S72APHB-7 B00005
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| OCR Text |
...referenced to clock rising edge 4 bank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4/8/Full Page(programmable) Burst type- sequential / interleave(programmable) Column access - random Auto p... |
| Description |
From old datasheet system
1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM
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| File Size |
687.47K /
55 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH16S72AMA-8 MH16S72AMA-10 MH16S72AMA-12 MH16S72AMA
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| OCR Text |
...tilizes industry standard 16M x 4 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP 168-pin (84-pin dual in-line package)
124p...8(programmable) Burst type- sequential / interleave(programmable) Column access - random Auto precha... |
| Description |
From old datasheet system
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
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| File Size |
1,042.58K /
52 Page |
View
it Online |
Download Datasheet |
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