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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF0910A 0910A
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OCR Text |
...
P1dB 30 37 50 40 30 20 10 0 35 40 20 6 8 10
add 20
add
0
20
30
INPUT POWER Pin(dBm)
VDS(V)
Nov. 97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0910A
L, S BAND POWER GaAs FET
S11 ,S22 vs. f.
+j50 +j25 +j100
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Description |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
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File Size |
25.38K /
3 Page |
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MIMIX[Mimix Broadband]
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Part No. |
30DBL0537
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OCR Text |
...itecture +21.0 dBm Output Power 35.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL...Channel Temperature (Tch)
uc
Min. 14.5 29.0 -
Absolute Maximum Ratings
(1) Channel tempera... |
Description |
14.5-17.0/29.0-34.0 GHz GaAs MMIC Active Doubler
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File Size |
178.01K /
5 Page |
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MOTOROLA
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Part No. |
MHVIC910HNR2
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OCR Text |
...WER GAIN (dB) 41 40 39 38 37 36 35 0 2 4 6 8 10 12 Pout, OUTPUT POWER (WATTS) TC = +85C, IDQ3 = 150 mA TC = -30C, IDQ3 = 150 mA TC = +25C, I...CHANNEL POWER RATIO (dBc) -50 -55 -60 -65 -70 -75 -80 -85 -90
Figure 12. Input Return Loss versus... |
Description |
960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit Documentation 921 MHz-960 MHz SiFET RF Integrated Power Amplifier
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File Size |
320.24K /
12 Page |
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it Online |
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Price and Availability
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