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MACOM[Tyco Electronics]
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Part No. |
MA4BN1840-1
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OCR Text |
...-65 C to +125 C -65 C to +150 C 320 C for 20 sec 10 Watts +/- 150 mA +/- 50 V
1. Exceeding any of these values may result in permanent damage
Monolithic HMIC Integrated Bias Network 18 - 40 GHz Electrical Specifications @ TA = 25 C (O... |
Description |
Monolithic HMIC Integrated Bias Network 18 - 40 GHz
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File Size |
178.30K /
9 Page |
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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Part No. |
STP80N06-1 STP80N06-10 4888
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OCR Text |
...e
o o
Value 60 60 20 80 60 320 150 1 5 -65 to 175 175
Unit V V V A A A W W/ o C V/ns
o o
C C
(*) Pulse width limited by safe operating area
March 1996
1/5
STP80N06-10
THERMAL DATA
R thj-case R thj-amb R thc-sink Tl... |
Description |
From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
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File Size |
76.00K /
5 Page |
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it Online |
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ST Microelectronics
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Part No. |
STB130NS04ZB-1
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OCR Text |
...ing area drain current (pulsed) 320 a p tot total dissipation at t c = 25c 300 w derating factor 2.0 w/c v esd(g-s) gate-source esd(hbm-c=100 pf, r=1.5 k ?) 4kv t j t stg operating junction temperature storage temperature -55 to 175 c tab... |
Description |
N-channel Power MOSFET
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File Size |
385.68K /
16 Page |
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it Online |
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