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  30.0018 Datasheet PDF File

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    2SD1450 SD1450

PANASONIC[Panasonic Semiconductor]
Part No. 2SD1450 SD1450
OCR Text ...or power dissipation PC (mW) 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C Collector current IC (A) 400 1.6 IB=4.0mA 3.5mA 1.2 3.0mA 2.5mA 2.0mA 0.8 1.5mA 1.0mA 0.4 0.5mA 300 25C 200 100 0 0 20 40 60 80 100 12...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 38.47K  /  2 Page

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    UPC2925T UPC2925 UPC2926T UPC2926 UPC2918 UPC2918T

NEC[NEC]
Part No. UPC2925T UPC2925 UPC2926T UPC2926 UPC2918 UPC2918T
OCR Text ...e Unit V W C C C C/W C/W -30 to +85 -30 to +150 -55 to +150 12.5 125 Note Internally limited. When the operating junction temperature rises over 150C, the internal circuit shuts down the output voltage. Caution If the absolute maxi...
Description THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR

File Size 416.54K  /  12 Page

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    2SD1894

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1894
OCR Text ...ssipation PC (W) 70 60 50 40 30 20 10 10 IB=5mA 30 Collector current IC (A) 8 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 10 6 3 TC=-25C 1 25C 0.3 100C 4 (2) 2 (3) 0 0 20 40 60 80 100 120 140 1...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 52.74K  /  3 Page

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    2SK1317

HITACHI[Hitachi Semiconductor]
Part No. 2SK1317
OCR Text ...se Temperature TC (C) 150 30 100 300 1,000 3,000 10,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 5 Pulse Test 15 V 2.0 10 V 8V 7V 3 6V Drain Current ID (A) 1.6 Typical Transfer Characteristics 4 Drain Cu...
Description Silicon N-Channel MOS FET

File Size 47.90K  /  8 Page

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    2SK2025-01

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
Part No. 2SK2025-01
OCR Text ... T ch T stg Rating 600 600 4 16 30 60 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Vo...
Description XTAL CER SMT 6X3.5 2PAD 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel MOS-FET

File Size 209.33K  /  2 Page

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    2SK2114 2SK2115

Hitachi Semiconductor
Part No. 2SK2114 2SK2115
OCR Text ...ch Tstg 2 1 Ratings 450 500 30 5 20 5 35 150 -55 to +150 Unit V V A A A W C C 2 2SK2114, 2SK2115 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK2114 2SK2115 V(BR)GSS I GSS I DSS Symbol V(BR...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 33.04K  /  6 Page

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    2SK2252-01L 2SK2252-01S

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2252-01L 2SK2252-01S
OCR Text ... T ch T stg Rating 250 250 8 32 30 50 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Vo...
Description N-channel MOS-FET

File Size 190.92K  /  2 Page

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    PJ3842 PJ3842B PJ3842BCD PJ3842BCS

PROMAX-JOHNTON
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
Part No. PJ3842 PJ3842B PJ3842BCD PJ3842BCS
OCR Text ...bol (ICC +IZ) Io W Vin Io Value 30 1.0 5.0 -0.3 to +5.5 10 Unit mA A J V mA PD RJA PD RJA TJ TA Tstg 862 145 1.25 100 +150 0 to +70 -65 to +150 mW /W W /W ELECTRICAL CHARACT ERISTICS (VCC = 15V (Note 2), RT =10K, CT =3.3nF, T...
Description 30mA; high performance current mode controller

File Size 373.86K  /  15 Page

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    2SK2904-01

FUJI[Fuji Electric]
Part No. 2SK2904-01
OCR Text ...*1 PD Tch Tstg Rating 60 80 320 30 972.3 125 +150 -55 to +150 Unit Equivalent circuit schematic Drain(D) V A A V mJ W C C *1 L=0.203mH, Vcc=24V Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) ...
Description    N-CHANNEL SILICON POWER MOS-FET

File Size 112.66K  /  4 Page

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    2SK3030 2SK3023 2SK3030TENTATIVE

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3030 2SK3023 2SK3030TENTATIVE
OCR Text ...ent q Switching power supply 7.30.1 1.80.1 unit: mm 6.50.1 5.30.1 4.350.1 2.30.1 0.50.1 s Applications 2.50.1 0.8max 0.930.1 1.00.1 0.10.05 0.50.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source break...
Description Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Silicon N-Channel Power F-MOS FET

File Size 23.25K  /  1 Page

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