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  3.50-4.50v Datasheet PDF File

For 3.50-4.50v Found Datasheets File :: 24782    Search Time::3.578ms    
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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ... 0.11 ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ ,...50 0 @Nts: oe 1 VGS = 0 V . 2 f=1Mz . H VGS , Gate-Source Voltage Capacitance 5 C rss 20...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...or 10 seconds Max. 17 12 60 3.8 79 0.53 20 150 A 7.9 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ mJ V/ns C Ther...50 V V D S = 20 V 16 12 8 C rss 200 4 0 1 10 100 A 0 0 5 10 15 20 FO R T...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...seconds Max. 8.0 5.1 32 125 3.1 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V/ns C Typical SMPS Topologies l...50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...fective Output Capacitance Min. 3.7 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 11 23 26 19 1018 155 8.0 1490 4...50 Max. 1.0 --- 62 Units C/W Diode Characteristics Min. Typ. Max. Units IS I SM VSD ...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ...Note 2) (Note 1) (Note 1) (Note 3) IRFS840B 8.0 5.1 32 320 8.0 13.4 3.5 Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage ...50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, J...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ... 10 seconds Max. 8.0 5.1 28 3.1 125 1.0 30 510 8.0 13 3.5 -55 to + 150 300 (1.6mm from case) Units A W W W/C V mJ A mJ V/ns C Th...50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

File Size 169.91K  /  10 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text 3 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanc...50 75 100 TA , CASE TEMPERATURE (oC) 125 150 0.6 0.4 0.2 0 25 50 75 100 125 ...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9230 JANTXV2N6806 JANTX2N6806

IRF[International Rectifier]
Part No. IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text ...gh energy pulse circuits. TO-3 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Dr...50 100 100 80 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = -1.0mA Reference to 25C, I D =...
Description TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP CER 250VAC 82PF 5% SL 1808
6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ... seconds Max. -6.8 -4.8 -27 3.8 48 0.32 20 140 -4.0 4.8 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C ...50 75 100 125 150 175 90% VDS TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Ca...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ... Typ. --- 0.50 --- Max. 3.1 --- 62 Units C/W 5/13/98 IRF9520N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD L...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

File Size 91.94K  /  8 Page

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