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  3.3a Datasheet PDF File

For 3.3a Found Datasheets File :: 1318    Search Time::6.016ms    
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    FAIRCHILD SEMICONDUCTOR CORP
Part No. FDPF33N25
OCR Text ...delay time v dd = 125v, i d = 33a r g = 25 (note 4, 5) -- 35 80 ns t r turn-on rise time -- 230 470 ns t d(off) turn-off delay time -- 75 160 ns t f turn-off fall time -- 120 250 ns q g total gate charge v ds = 200v, i d = 33a v gs =...
Description 250V N-Channel MOSFET

File Size 787.46K  /  8 Page

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    LINEAGE POWER LLC
Part No. QBK033A0B41-HZ
OCR Text 33a output current * ul is a registered trademark of underwriters laboratories, inc. ? csa is a registered trademark of canadian standards association. ? vde is a trademark of verband deutscher elektrotechniker e.v. ** iso i...
Description 1-OUTPUT 396 W DC-DC REG PWR SUPPLY MODULE

File Size 419.90K  /  15 Page

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    Lineage Power
Part No. QBDW033A0B
OCR Text ... dc input; 9.6-12v dc output; 33a output current * ul is a registered trademark of underwriters laboratories, inc. ? csa is a registered trademark of canadian standards association. ? vde is a trademark of verband deutscher ...
Description Power Modules; DC-DC Converters

File Size 813.46K  /  17 Page

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    FQB33N10-04

Fairchild Semiconductor
Part No. FQB33N10-04
OCR Text ...nd dc motor control. features  33a, 100v, r ds(on) = 0.052 ? @v gs = 10 v  low gate charge ( typical 38 nc)  low crss ( typical 62 pf)  fast switching.  100% avalanche tested  improved dv/dt capability  175 c maximum junction te...
Description 100V N-Channel MOSFET

File Size 332.50K  /  9 Page

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    AP70T03GP AP70T03GS AP70T03GP-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP70T03GP AP70T03GS AP70T03GP-14
OCR Text ...e on-resistance v gs =10v, i d =33a - - 9 m ? v gs =4.5v, i d =20a - - 18 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs v ds =10v, i d =33a - 35 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua ...
Description Simple Drive Requirement, Low Gate Charge

File Size 95.15K  /  4 Page

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    AP70T03GJ-HF AP70T03GH-HF-14 AP70T03GJ-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP70T03GJ-HF AP70T03GH-HF-14 AP70T03GJ-HF-14
OCR Text ...on-resistance 2 v gs =10v, i d =33a - - 9 m ? v gs =4.5v, i d =20a - - 18 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs v ds =10v, i d =33a - 35 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua ...
Description Simple Drive Requirement, Low Gate Charge

File Size 95.32K  /  4 Page

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    IRGPH50S

International Rectifier
Part No. IRGPH50S
OCR Text ...CE(sat) 2.0V @VGE = 15V, IC = 33A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having s...
Description INSULATED GATE BIPOLAR TRANSISTOR

File Size 39.64K  /  2 Page

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    AP70T03GI AP70T03GI-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP70T03GI AP70T03GI-14
OCR Text ...on-resistance 2 v gs =10v, i d =33a - - 9 m v gs =4.5v, i d =20a - - 18 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =33a - 35 - s i dss drain-source leakage current v ds...
Description Fast Switching Performance, Single Drive Requirement

File Size 118.32K  /  5 Page

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    AP70T03AS

Advanced Power Electronics Corp.
Part No. AP70T03AS
OCR Text ...e on-resistance v gs =10v, i d =33a - - 9 m v gs =4.5v, i d =20a - - 18 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs v ds =10v, i d =33a - 35 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =...
Description Simple Drive Requirement, Low Gate Charge

File Size 73.21K  /  4 Page

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