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  3.2v. Datasheet PDF File

For 3.2v. Found Datasheets File :: 4007    Search Time::4.515ms    
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    Advanced Power Electron...
Part No. AP4N4R2H
OCR Text ...in-source leakage current v ds =32v, v gs =0v - - 10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =30a - 28 44.8 nc q gs gate-source charge v ds =32v - 7 - nc q gd gate-drain ("miller") charge v...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 108.34K  /  6 Page

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    ADP195 ADP195ACBZ-R7

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Analog Devices
Part No. ADP195 ADP195ACBZ-R7
OCR Text ... BW M4s T 10% A CH1 2.32V Figure 4. RDSON vs. Temperature 0.20 0.18 0.16 0.14 Figure 7. Typical Rise Time and Inrush Current, VIN = 3.6 V, No Load VEN VOUT IOUT = 10mA IOUT = 100mA IOUT = 200mA IOUT = 500mA IOUT = 1000m...
Description Logic Controlled, High-Side Power Switch with Reverse Current Blocking

File Size 203.81K  /  12 Page

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    NTE7208

NTE Electronics
Part No. NTE7208
OCR Text .... . . . . . . . . . . . . 2V to 32V Output Current Range (Vin - Vout > 1.5V to 4V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mA Typical Output Current Accuracy (IO = 350mA) . . . . . . . . . . . . . . . ...
Description Integrated Circuit Constant Current Single Output LED Driver

File Size 62.73K  /  4 Page

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    VSC8162

Vitesse Semiconductor Corporation
ETC
Part No. VSC8162
OCR Text ...nce voltage of approximately -1.32V on both the true and complement inputs. This input can either be DC coupled or AC coupled; it can also be driven single-ended or differentially. Figure 2 shows the configuration for single-ended, AC-coupl...
Description 2.488 Gbit/sec SONET/SDH 1:16 Demux with Clock Recovery

File Size 151.20K  /  20 Page

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    Advanced Power Electron...
Part No. AP4N3R6H
OCR Text ...in-source leakage current v ds =32v, v gs =0v - - 10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =40a - 121 194 nc q gs gate-source charge v ds =32v - 15 - nc q gd gate-drain ("miller") charge ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 107.38K  /  6 Page

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    Advanced Power Electron...
Part No. AP4N3R2I
OCR Text ...in-source leakage current v ds =32v, v gs =0v - - 10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =40a - 91 145.6 nc q gs gate-source charge v ds =32v - 19 - nc q gd gate-drain ("miller") charge...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 105.68K  /  6 Page

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    BTS462T Q67060-S7402 BTS462-T

INFINEON[Infineon Technologies AG]
Part No. BTS462T Q67060-S7402 BTS462-T
OCR Text ...e toff = f(Tj); RL = 47 160 32V 9V s 9V s 120 13.5V 120 t on toff 32V 100 100 80 80 60 60 40 40 20 20 0 -40 -20 0 20 40 60 80 100 120 C 160 0 -40 -20 0 2...
Description High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-SO -55 to 125
Smart Power High-Side-Switch
Smart High Side Switches - 100mΩ, 5-34V 3,5A, P-TO-252-5

File Size 301.25K  /  16 Page

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    TS32409

Taiwan Semiconductor Company, Ltd
Part No. TS32409
OCR Text ... Single supply operation: 3V to 32V Low input bias currents Internally compensated Common mode range extends to negative supply Single and split supply operation Block Diagram Ordering Information Part No. TS324CD14 C4 TS324CS14 RL ...
Description Low Power Quad Operational Amplifiers

File Size 336.59K  /  8 Page

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    IRFU4104 IRFR4104

IRF[International Rectifier]
Part No. IRFU4104 IRFR4104
OCR Text ...= 20V VGS = -20V ID = 42A VDS = 32V VGS = 10V VDD = 20V ID = 42A RG = 6.8 VGS = 10V e e Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 3...
Description 40V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=40V / Rds(on)=5.5mohm / Id=42A)
Power MOSFET(Vdss=40V, Rds(on)=5.5mohm, Id=42A)
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 178.95K  /  11 Page

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    AUIRF7739L2TR AUIRF7739L2TR1

International Rectifier
Part No. AUIRF7739L2TR AUIRF7739L2TR1
OCR Text ... 1.0V, f=1.0MHz VGS = 0V, VDS = 32V, f=1.0MHz VGS = 0V, VDS = 0V to 32V Diode Characteristics @ TJ = 25C (unless otherwise stated) IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ag ...
Description Automotive DirectFETPower MOSFET

File Size 357.35K  /  11 Page

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