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    2SB1032 2SB1032K

HITACHI[Hitachi Semiconductor]
Part No. 2SB1032 2SB1032K
OCR Text ... V V A A Test conditions I C = -25 mA, RBE = I E = -200 mA, IC = 0 VCB = -120 V, IE = 0 VCE = -100 V, RBE = VCE = -3 V, IC = -5 A*1 I C = ...30 V, I C = -5 A, IB1 = -IB2 = -10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to bas...
Description Silicon PNP Triple Diffused

File Size 35.68K  /  6 Page

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    2SB1048

HITACHI[Hitachi Semiconductor]
Part No. 2SB1048
OCR Text ...,000 1,000 300 100 -30 Ta = 75C 25 -25 VCE = -3 V Pulse Ta = 25C -0 .6 m Collector Current IC (A) -1 -0.8 m -0.6 m -0.2 -0.1 m W -0.4 -0.04 m -0.02 m -0.2 -0.01 m IB = 0 A 0 -2 -4 -6 -8 -1...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

File Size 31.00K  /  6 Page

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    2SB1071 2SB1071A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1071 2SB1071A
OCR Text ...Rating -40 -50 -20 -40 -5 -4 -8 25 2 150 -55 to +150 C C V A A W 123 Unit V Solder Dip (4.0) 1.40.1 1.30.2 0.5+0.2 -0.1 14.00.5 0.80.1 2.540.3 Collector-emitter voltage 2SB1071 (Base open) 2SB1071A Emitter-base volt...
Description Silicon PNP epitaxial planar type

File Size 83.97K  /  4 Page

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    2SB1072 2SB1072L 2SB1072S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SB1072 2SB1072L 2SB1072S
OCR Text ... V V A A Test conditions I C = -25 mA, RBE = I E = -50 mA, IC = 0 VCB = -80 V, IE = 0 VCE = -60 V, RBE = VCE = -3 V, IC = -2 A*1 I C = -2 ...30 Collector power dissipation PC (W) 20 10 Collector current IC (A) iC(peak) 1 s s 0 1 ms 10 A...
Description Silicon PNP Triple Diffused 三重扩散硅进步党

File Size 34.72K  /  6 Page

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    2SB1073

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1073
OCR Text ... Marking Symbol 2.50.1 +0.25 1 Transistor PC -- Ta 1.6 1200 Printed circut board: Copper foil area of 1cm2 or more, and the bo...30 Ta=25C 600 hFE -- IC 120 Cob -- VCB Collector output capacitance Cob (pF) VCE=-2V IE=0 f...
Description Silicon PNP epitaxial planer type(For low-frequency amplification)

File Size 34.72K  /  2 Page

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    2SB1079

HITACHI[Hitachi Semiconductor]
Part No. 2SB1079
OCR Text ...ns I C = -0.1 mA, IE = 0 I C = -25 mA, RBE = I C = -200 mA, RBE = *1 I E = -50 mA, IC = 0 VCB = -100 V, IE = 0 VCE = -80 V, RBE = VCE = -3...30 -10 -3 -1.0 -0.3 -0.1 -3 Ta = 25C 1 Shot Pulse iC(peak) IC(max) D 1 s C Area of Safe Operatio...
Description Silicon PNP Triple Diffused

File Size 35.32K  /  6 Page

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    2SB1091

HITACHI[Hitachi Semiconductor]
Part No. 2SB1091
OCR Text ... V V A A Test conditions I C = -25 mA, RBE = I E = -50 mA, IC = 0 VCB = -60 V, IE = 0 VCE = -50 V, RBE = VCE = -3 V, IC = -4 A*1 I C = -4 ...30,000 =4 0W -10 Typical Output Characteristics P -3.0 c DC current transfer ratio hFE ...
Description Silicon PNP Triple Diffused

File Size 34.50K  /  6 Page

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    2SB1103

HITACHI[Hitachi Semiconductor]
Part No. 2SB1103
OCR Text ... V V A A Test conditions I C = -25 mA, RBE = I E = -50 mA, IC = 0 VCB = -60 V, IE = 0 VCE = -50 V, RBE = VCE = -3 V, IC = -4 A*1 I C = -4 ...30 -100 -300 Collector to emitter voltage VCE (V) 2S B1104 2S B1103 = 25 ) C 3 2SB110...
Description Silicon PNP Darlington Transistor
Silicon PNP Triple Diffused

File Size 35.86K  /  7 Page

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    2SB1154

EPCOS AG
PANASONIC[Panasonic Semiconductor]
Part No. 2SB1154
OCR Text ....3 40 - 0.1 20 (3) 0 0 25 (2) - 0.03 50 75 100 125 150 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 Ambient temperature Ta (C) Collector to emitter voltage...
Description FILTER PLATE 10 A, 80 V, PNP, Si, POWER TRANSISTOR
Silicon PNP epitaxial planar type(For power switching)

File Size 60.17K  /  3 Page

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    2SB1155

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1155
OCR Text ... (TC=25C) Ratings -130 -80 -7 -25 -15 80 3 150 -55 to +150 Unit V V V 21.00.5 15.00.2 Low collector to emitter saturation voltage VCE...30 - 0.5 -1.5 -1.5 -2.5 V V V V MHz s s s 260 min typ max -10 -50 Unit A A V Forward current tran...
Description Silicon PNP epitaxial planar type(For power switching)

File Size 59.98K  /  3 Page

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