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  240 120v Datasheet PDF File

For 240 120v Found Datasheets File :: 762    Search Time::1.141ms    
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    STMicroelectronics N.V.
Matsshita / Panasonic
Part No. 2SC1473A 2SC1473 2SC1473/2SC1473A 2SC1473Q 2SC1473AR 2SC1473AP
OCR Text ...0 140 120 100 80 60 40 20 240 180 Ta=75C 25C 120 -25C 60 0 0.1 0.3 1 3 10 0 -1 -3 -10 -30 -100 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to...
Description TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 70MA I(C) | TO-92 晶体管|晶体管|叩| 300V五(巴西)总裁|提供70mA一(c)|92
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 70MA I(C) | TO-92
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits

File Size 56.64K  /  4 Page

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    IRFR24N15D IRFU24N15D

International Rectifier
Part No. IRFR24N15D IRFU24N15D
OCR Text ... 320 VDS L D R IV E R 240 ID TOP 5.9A 10A 14A BOTTOM RG 20V tp D .U .T IA S + V - DD A E AS , Single Pulse Avalanche Energy (mJ) 160 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit 80 V (B R )...
Description 150V Single N-Channel HEXFET Power MOSFET in a D-Pak package
HEXFET? Power MOSFET

File Size 106.41K  /  10 Page

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    IRFS52N15D IRFB52N15D IRFSL52N15D IRFB52N15

Fairchild Semiconductor
IRF[International Rectifier]
Part No. IRFS52N15D IRFB52N15D IRFSL52N15D IRFB52N15
OCR Text ...6-32 or M3 screw Max. 60 43 240 3.8 320 2.1 30 5.5 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V V/ns C ...120v, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise s...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.032ohm/ Id=50A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)

File Size 133.21K  /  11 Page

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    SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM
OCR Text ...wer Dissipation (TA = 25C) * 240 4.0 10 5.5 3.13 100 0.8 -55 to +150 300 TJ, Tstg TL Power Dissipation (TC = 25C) - Derate above 25...120v VDS = 300V 1000 VGS, Gate-Source Voltage [V] Capacitance [pF] Ciss 8 VDS = 48...
Description 600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A

File Size 639.93K  /  9 Page

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    Matsshita / Panasonic
Part No. 2SA1767 2SA1767Q
OCR Text ... 2 0 -1 3 1 0 40 80 120 160 200 240 Collector to base voltage VCB (V) Ambient temperature Ta (C) 2 Request for your special attention and precautions in using the technical information and semiconductors described in this materi...
Description TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 70MA I(C) | TO-92

File Size 44.83K  /  3 Page

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    APT12080JVR

ADPOW[Advanced Power Technology]
Part No. APT12080JVR
OCR Text ... 12 18 4.5V 12 6 4V 0 120 240 360 480 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 6 4V 0 5 ...120v VDS=240V 12 10 5 8 VDS=600V 1 .5 4 100 200 300 400 500 600 Qg, TOTAL GATE ...
Description POWER MOS V 1200V 15A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

File Size 203.21K  /  4 Page

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    APT12080LVR

ADPOW[Advanced Power Technology]
Part No. APT12080LVR
OCR Text ... 12 18 4.5V 12 6 4V 0 120 240 360 480 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 6 4V 0 5 ...120v 12 VDS=240V 10 5 8 VDS=600V 1 .5 4 100 200 300 400 500 600 Qg, TOTAL GATE CHA...
Description POWER MOS V 1200V 16A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.64K  /  4 Page

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    IRF5M3415

IRF[International Rectifier]
Part No. IRF5M3415
OCR Text ...UIT SEE FIGURE 13 120 160 200 240 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERA...
Description POWER MOSFET N-CHANNEL(Vdss=10V, Rds(on)=0.049ohm,Id=35A)
THRU-HOLE (TO-254AA) 150V, N-CHANNEL

File Size 111.20K  /  7 Page

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    HSC2240 HLB123I

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HSC2240 HLB123I
OCR Text ...cation of hFE Rank Range Y 120-240 GR 200-400 HSC2240 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 125 C o Spec. No. : HE6529 Issued Date : 1992...
Description NPN EPITAXIAL PLANAR TRANSISTOR

File Size 35.75K  /  4 Page

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    Microsemi
Part No. SUPPRESSOR MSC0294A
OCR Text ...ERATING VOLTAGE NOMINAL Vac 120 240 440 REVERSE STAND-OFF NOTE 1 (VWM) Vdc 175 350 640 BREAKDOWN VOLTAGE MIN / MAX (VBR) NOTE 2 V 200 / 225 400 / 450 735 / 900 MAXIMUM REVERSE LEAKAGE (ID) A 5 5 5 MAXIMUM CLAMPING VOLTAGE (VC) V 280 560 112...
Description From old datasheet system

File Size 171.95K  /  2 Page

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For 240 120v Found Datasheets File :: 762    Search Time::1.141ms    
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