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20 100ns Datasheet PDF File

For 20 100ns Found Datasheets File :: 4730 Search Time::3.437ms
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				Infineon Technologies A...
Part No.	IKA06N60T-13
OCR Text	20.09.2013 low loss duopack : igbt in trenchstop ? and fieldstop technology with soft, fast recovery anti-parallel emitter controlled he dio...100ns t r t d(on) t f t d(off) t , s w i t c h i n g t i m e s ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 1ns 1...
Description	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
File Size	514.91K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IGW30N60T IGP30N60T IGP30N60T09
OCR Text	...VGE tSC Ptot Tj Tstg - 90 90 20 5 187 -40...+175 -55...+175 260 V s W C VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Oper...100ns tf t d(on) tf 100ns 10ns tr t d(on) tr 1ns 0A 10A 20A 30A...
Description	Low Loss IGBT in TrenchStop and Fieldstop technology
File Size	440.57K / 13 Page	View it Online	Download Datasheet

				BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
Part No.	BS616LV4010DC BS616LV4010 BS616LV4010AC BS616LV4010AI BS616LV4010BC BS616LV4010BI BS616LV4010DI BS616LV4010EC BS616LV4010EI
OCR Text	...9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB DQ15 DQ14 DQ13 ...100ns) with address toggle. ; tBA is 70ns/100ns (@speed=70ns/100ns) without address toggle. R0201-BS...
Description	Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM56 × 16 LM4985 Boomer ® Audio Power Amplifier Series Stereo 135mW Low Noise Headphone Amplifier with Selectable Capacitively Coupled or Output Capacitor-less (OCL) Output and Digitally Controlled (I2C) V; Package: MICRO SMD; No of Pins: 12
File Size	224.62K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR3551 IR3551MPBF IR3551MTRPBF
OCR Text	... 83 85 87 89 91 93 95 0 5 10 15 20 25 30 35 40 45 50 output current (a) efficiency (%) 0 2 4 6 8 10 12 14 16 18 20 power loss (w) sep...100ns, 200ma dc 4 pgnd 0.3 v - 0.3v 15ma 15ma 5, 28 gatel vcc + 0.3v - 3v for ...
Description	The IR3551 integrated PowIRstage? is a synchronous buck gate driver co-packed with a control MOSFET and a synchronous MOSFET with integrated Schottky diode.
File Size	801.66K / 22 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB50N60T IGP50N60T
OCR Text	...E tSC Ptot Tj Tstg - 150 150 20 5 333 -40...+175 -55...+175 260 V s W C VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Oper...100ns tf tr t, SWITCHING TIMES 100ns tf t d(on) tr 10ns 10ns t d(on) 0A ...
Description	1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
File Size	398.59K / 13 Page	View it Online	Download Datasheet

				MCNIX[Macronix International]
Part No.	MX23L6411TC-12 23L6411-10 23L6411-12 MX23L6411 MX23L6411MC-10 MX23L6411MC-12 MX23L6411RC-10 MX23L6411RC-12 MX23L6411TC-10
OCR Text	...9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A20 A19 A8 A9 A10 A11 A12 A13 A14...100ns 100ns 100ns 30ns 30ns 0ns 20ns 23L6411-12 MIN. MAX. 120ns 120ns 120ns 50ns 50ns 0ns 20ns No...
Description	64M-BIT (8M x 8 / 4M x 16) Mask ROM with Page Mode
File Size	483.74K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGP20N60 SGP20N6009 SGW20N60
OCR Text	...anche energy, single pulse IC = 20 A, VCC = 50 V, RGE = 25 , start at Tj = 25C Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150C ...100ns tf t, SWITCHING TIMES 100ns tf td(on) tr td(on) tr 10ns 10A 20A ...
Description	Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
File Size	357.57K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IGB10N60T
OCR Text	...) Symbol VCE IC Value 600 20 10 Unit V A ICpuls VGE tSC Ptot Tj Tstg 30 30 20 5 110 -40...+175 -55...+175 260 V s W C VGE ...100ns 100ns tf t, SWITCHING TIMES t, SWITCHING TIMES tf t d(on) 10ns t d(on) 10ns ...
Description	Low Loss IGBT in TrenchStop and Fieldstop technology
File Size	775.89K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGW25N12009 SGW25N120
OCR Text	...0 C Ptot 313 W tSC 10 s VGE EAS 20 130 V mJ ICpuls Symbol VCE IC 46 25 84 84 Value 1200 Unit V A VCE 1200V IC 25A Eoff 2.9mJ Tj 150C Marking...100ns tf t, SWITCHING TIMES 100ns tf tr td(on) td(on) tr 10ns 0A 20A 40A ...
Description	Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
File Size	331.27K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SKW25N12008
OCR Text	... 42 25 IFpuls VGE tSC Ptot 80 20 10 313 V s W VGE = 15V, 100VVCC 1200V, Tj 150C 1 2 J-STD-020 and JESD-022 Allowed number of sho...100ns tf t, SWITCHING TIMES 100ns tf tr td(on) td(on) tr 10ns 0A 20A 40A ...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	324.07K / 13 Page	View it Online	Download Datasheet

For 20 100ns Found Datasheets File :: 4730 Search Time::3.437ms
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