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For 10-ghz Found Datasheets File :: 32205 Search Time::5.078ms
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				MOTOROLA[Motorola, Inc]
Part No.	BFS17LT1
OCR Text	...Emitter Breakdown Voltage (IC = 10 mA) Collector-Base Breakdown Voltage (IC = 100 A) Collector Cutoff Current (VCE = 10 V) Collector Cutoff ...GHz pF dB (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1995 BFS17LT1 1 PACKAGE DIMENSIONS ...
Description	RF TRANSISTOR NPN SILICON
File Size	52.74K / 2 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFS17P Q62702-F940 BFS17PQ62702-F940
OCR Text	...CEO VCBO VEBO IC ICM Ptot f 10 MHz Total power dissipation mW 280 150 - 65 + 150 - 65 ... + 150 340 C TS 55 C Junction tempera...GHz IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz Collector-base capacita...
Description	NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 CAP 15000PF X7R 250VAC X2 2220 TRANSISTOR UHF BIPOLAR BREITBAND From old datasheet system
File Size	48.51K / 5 Page	View it Online	Download Datasheet

				Vishay Intertechnology,Inc. TFUNK[Vishay Telefunken] Vishay Siliconix
Part No.	BFS17R BFS17W BFS17
OCR Text	...de * FaxBack +1-408-970-5600 1 (10) BFS17/BFS17R/BFS17W Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specif...GHz GHz GHz pF pF pF dB dB dB mV 23 dBm Document Number 85038 Rev. 4, 20-Jan-99 www.vish...
Description	Silicon NPN Planar RF Transistor From old datasheet system
File Size	148.66K / 10 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFS17S Q62702-F1645
OCR Text	...CEO VCBO VEBO IC ICM Ptot f 10 MHz Total power dissipation mW 280 150 - 65 + 150 - 65 ... + 150 240 C TS 83 C Junction tempera...GHz IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz Collector-base capacita...
Description	NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) From old datasheet system
File Size	55.96K / 5 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BFS17W
OCR Text	... 25 mA; VCE = 5 V IE = 0; VCB = 10 V; f = 1 MHz IC = 1 mA; VCE = 5 V; f = 1 MHz CONDITIONS - - - - 25 - - - - MIN. - - - - 90 1.6 0.8 0.75 - TYP. MAX. 25 15 50 300 - - 1.5 - 175 GHz pF pF C UNIT V V mA mW 1995 Sep 04 2 Philips Semi...
Description	NPN 1GHz wideband transistor(NPN 1G赫兹宽带晶体 NPN 1 GHz wideband transistor
File Size	46.15K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BFS17
OCR Text	...figure CONDITIONS IE = 0; VCB = 10 V IC = 2 mA; VCE = 1 V IC = 25 mA; VCE = 1 V IC = 2 mA; VCE = 5 V; f = 500 MHz IC = 25 mA; VCE = 5 V; f =...GHz GHz pF pF pF dB September 1995 3 Philips Semiconductors Product specification NPN...
Description	NPN 1 GHz wideband transistor
File Size	37.46K / 6 Page	View it Online	Download Datasheet

				OKI electronic componet... OKI[OKI electronic componets] OKI electronic eomponets
Part No.	KGF1323
OCR Text	...DIMENSIONS 4.50.1 1.6 +0.15 -0.10 1.50.1 2.50.1 10.2 40.2 0.48 +0.08 -0.05 0.4 +0.08 -0.05 1.50.1 1.50.1 30.1 0.4 +0.08 -0.05 ...GHz Z0 = 50 W 6/7 electronic components KGF1323 Test Circuit and Bias Configuration for...
Description	From old datasheet system Power FET(Plastic Package Type)
File Size	81.61K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	LLE16045X
OCR Text	...rature soldering temperature t 10 s; note 1 f = 1.65 GHz; VCE = 24 V; class AB Tmb = 75 C CONDITIONS open emitter RBE = 220 open base open collector LLE16045X MIN. - - - - - - - -65 - - MAX. 45 30 15 3 0.5 1 11 +150 200 235 UN...
Description	NPN microwave power transistor
File Size	75.36K / 12 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE4210M01 NE4210M01-T1
OCR Text	...r Symbol VDS ID Pin MIN. TYP. 2 10 MAX. 3 20 +5 Unit V mA dBm ELECTRICAL CHARACTERISTICS (TA = 25 C) Parameter Gate to Source Leak Curre...GHz f = 4 GHz Associated Gain Ga f = 12 GHz f = 4 GHz VDS = 2 V ID = 10 mA 9.0 20 -0.2 50 MIN. TYP. ...
Description	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
File Size	77.13K / 12 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NE4210S01 NE4210S01-T1 NE4210S01-T1B
OCR Text	...ol VDS ID Pin MIN. 1 5 - TYP. 2 10 - MAX. 3 15 0 Unit V mA dBm The information in this document is subject to change without notice. Befo...GHz MIN. - 15 -0.2 40 - 11.0 TYP. 0.5 40 -0.7 55 0.50 13.0 MAX. 10 70 -2.0 - 0.70 - Unit A mA V ...
Description	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
File Size	62.93K / 16 Page	View it Online	Download Datasheet

For 10-ghz Found Datasheets File :: 32205 Search Time::5.078ms
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