| |
|
 |
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| Part No. |
MRF19030LSR3 MRF19030LR3
|
| OCR Text |
... = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MH... |
| Description |
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
| File Size |
591.35K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Motorola
|
| Part No. |
MRF19030SR3 MRF19030R3
|
| OCR Text |
... = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)... |
| Description |
2.0 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
| File Size |
446.17K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
飞思卡尔半导体(中国)有限公司
|
| Part No. |
MW5IC2030NBR1065
|
| OCR Text |
...ching that makes it usable from 1930 to 1990 mhz. this multi - stage structure is rated for 26 to 28 volt operation and covers all typical cellular base station modulation formats. final application ? typical cdma performance: v dd = 2... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大
|
| File Size |
663.32K /
20 Page |
View
it Online |
Download Datasheet |
| |
|
|
飞思卡尔半导体(中国)有限公司
|
| Part No. |
MW5IC2030GNBR1
|
| OCR Text |
...ching that makes it usable from 1930 to 1990 mhz. this multi - stage structure is rated for 26 to 28 volt operation and covers all typical cellular base station modulation formats. final application ? typical cdma performance: v dd = 2... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大
|
| File Size |
479.83K /
16 Page |
View
it Online |
Download Datasheet |
| |
|
|
Motorola
|
| Part No. |
MRF19085
|
| OCR Text |
...18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) g ps 12 13 db drain efficiency (v dd = 26 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990... |
| Description |
MRF19085, MRF19085R3, MRF19085SR3, MRF19085LSR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs
|
| File Size |
332.28K /
12 Page |
View
it Online |
Download Datasheet |
| |
|
|
飞思卡尔半导体(中国)有限公司
|
| Part No. |
MRF18090BSR3
|
| OCR Text |
... = 26 vdc, i dq = 750 ma, f = 1930 - 1990 mhz) g ps 12 13.5 ? db drain efficiency @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1930 - 1990 mhz) 40 45 ? % input return loss (1) (v dd = 26 vdc, p out = 90 w cw, i dq = 750 ma, ... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
|
| File Size |
385.00K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
RF Monolithics
|
| Part No. |
SF2001E
|
| OCR Text |
...60 mhz passband insertion loss, 1930 -1990 mhz il 2.35 4.0 db amplitude ripple, 1930 -1990 mhz 1.4 2.4 db p-p attenuation referenced to 0 db dc to1850 mhz 20.0 32.0 db 1850 to 1910 mhz 10.0 21.0 db 2010 to 2040 mhz 4.5 10.0 db ... |
| Description |
SAW Filter
|
| File Size |
705.96K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| Part No. |
MRF19085R3 MRF19085 MRF19085LR3 MRF19085SR3 MRF19085LSR3
|
| OCR Text |
...= 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) 3rd Order Intermo... |
| Description |
RF Power Field Effect Transistors
|
| File Size |
581.22K /
12 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
