|
|
|
Samsung semiconductor
|
Part No. |
K7Q161854A K7Q161854A-FC10 K7Q161854A-FC13
|
OCR Text |
...M
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Contro...1J,2J,9J,1K,2K, 9J,1L,9L,10L,1M,2M,9M,1N,9N,10N,1P,2P,9P DESCRIPTION Input Clock Input Clocks for Ou... |
Description |
512Kx36-bit, 1Mx18-bit QDR SRAM
|
File Size |
359.88K /
17 Page |
View
it Online |
Download Datasheet |
|
|
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
Part No. |
K7R161882B K7R163682B K7R160982B
|
OCR Text |
...M
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Un...1J,2K,1M,1N,2P 11P,10M,11L,11K,10J,11F,11E,10C,11B,9P,9N,10L 9K,9G,10F,9E,9D,10B,2B,3D,3E,2F,3G,3K,2... |
Description |
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36
|
File Size |
425.70K /
19 Page |
View
it Online |
Download Datasheet |
|
|
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
Part No. |
K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R161884B-FC25 K7R161884B-FC30 K7R163684B K7R163684B-FC16 K7R163684B-FC20 K7R163684B-FC25 K7R163684B-FC30 K7R320982M
|
OCR Text |
...M
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Un...1J,2K,1M,1N,2P 11P,10M,11L,11K,10J,11F,11E,10C,11B,9P,9N,10L 9K,9G,10F,9E,9D,10B,2B,3D,3E,2F,3G,3K,2... |
Description |
512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36 512Kx36 & 1Mx18 QDR II b4 SRAM 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
|
File Size |
415.94K /
18 Page |
View
it Online |
Download Datasheet |
|
|
|
Galvantech
|
Part No. |
GVT71256T18 71256T18
|
OCR Text |
...* Fast match times: 3.5, 3.8, 4.0 and 4.5ns Fast clock speed: 166, 150, 133, and 100MHz Fast OE# access times: 3.5, 3.8, 4.0 and 5.0ns Pipel...1J, 7J, 1M, 7M, 1U, 7U
GVT71256T18 256K X 18 SYNCHRONOUS TAG SRAM
TQFP PINS
38 39 43 15, 41,6... |
Description |
256K X 18 SYNCHRONOUS TAG SRAM From old datasheet system
|
File Size |
269.04K /
24 Page |
View
it Online |
Download Datasheet |
|
|
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
Part No. |
K7R321884M K7R321884M-FC16 K7R321884M-FC20 K7R321884M-FC25 K7R323684M-FC16 K7R323684M K7R323684M-FC25 K7R323684M-FC20 K7R640982M K7R323682
|
OCR Text |
...M
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Package dimension modify. P.20 from 13mmx15mm to 15mmx17mm 1. 2. 3. ...1J,2K,1M,1N,2P 11P,10M,11L,11K,10J,11F,11E,10C,11B,9P,9N,10L 9K,9G,10F,9E,9D,10B,2B,3D,3E,2F,3G,3K,2... |
Description |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM 1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
File Size |
193.61K /
18 Page |
View
it Online |
Download Datasheet |
|
|
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
Part No. |
L6370D L6370L L6370 4282
|
OCR Text |
...ERS: L6370L (MULTIWATT11) L6 37 0 D ( P o we rS O 2 0 )
DESCRIPTION The L6370 is a monolithic Intelligent Power Switch in Multipower BCD ...1J (at Tj = 85C) (see figure 2)
INPUT SECTION The input section is an high impedance differential... |
Description |
2.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH .5a高边驱动器工业智能功率开 From old datasheet system
|
File Size |
92.52K /
10 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|