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				PROMOS TECHNOLOGIES INC
Part No.	V59C1512404QCF-25
OCR Text	... programmable additive latency:0, 1, 2, 3, 4 and 5 write latency=read latency-1 programmable wrap sequence: sequential or interleave pr...164)qc is a four bank ddr dram organized as 4 banks x 32mbit x 4 (404), 4 banks x 16mbit x 8 (804), ...
Description	DDR DRAM, PBGA60
File Size	1,240.83K / 78 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors EPCOS SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	B25667 B25667-A2157-A175 B25667-A2157-A375 B25667-A2207-A175 B25667-A2317-A175 B25667-A2317-A375 B25667-A2457-A375 B25667-A2507-A175 B25667-A2627-A375 B25667-A2757-A375 B25667-A3107-A175 B25667-A3127-A175 B25667-A3127-A375 B25667-A3147-A175 B25667-A3147-A375 B25667-A3167-A175 B25667-A6996-A375 B25667-A3167-A375 B25667-A3207-A175 B25667-A3207-A375 B25667-A3247-A175 B25667-A3247-A375 B25667-A3297-A375 B25667-A3337-A375 B25667-A3417-A375 B25667-A3497-A375 B25667-A3996-A375 B25667-A4117-A375 B25667-A4127-A375 B25667-A4177-A375 B25667-A4187-A375 B25667-A4197-A375 B25667-A4207-A375 B25667-A4237-A365 B25667-A4237-A375 B25667-A4277-A375 B25667-A4307-A375 B25667-A4387-A375 B25667-A4467-A375 B25667-A4826-A375 B25667-A4926-A375 B25667-A5117-A175 B25667-A5127-A375 B25667-A5147-A175 B25667-A5147-A375 B25667-A5177-A175 B25667-A5177-A375 B25667-A5197-A375 B25667-A5247-A375 B25667-A5287-A375 B25667-A5726-A375 B25667-A5756-A175 B25667-A5966-A175 B25667-A5966-A375 B25667-A6207-A375 B25667-A6257-A375 B25667-A6307-A375 B25667-A6417-A375 B25667-A6507-A375
OCR Text	...ielectric dissipation factortan 0 Overvoltage < 0,25 W/kvar 2 * 10-4 UN + 10 % (up to 8 hours daily) UN + 15 % (up to 30 hours daily) UN + 2...164 121 x 164 121 x 164 121 x 164 121 x 200 121 x 164 121 x 164 121 x 164 121 x 164 121 x 164 121 x ...
Description	MKK AC Capacitors PhaseCap Power Factor Correction and Filtering MKK AC Capacitors PhaseCap⑩ Power Factor Correction and Filtering Compact design Enhanced inrush current withstand capability
File Size	545.31K / 31 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	NES2427P-45
OCR Text	... to 2.7 GHz. The device employs 0.9 m Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior per...164.3 163.0 162.0 160.7 159.2 157.7 155.7 154.4 152.6 150.7 148.7 147.2 145.4 143.4 142.0 141.0 140....
Description	45 W S-BAND PUSH-PULL POWER GaAs MES FET
File Size	44.03K / 8 Page	View it Online	Download Datasheet

				NEC
Part No.	2SC4885
OCR Text	...d * Low Voltage Use * Low Cob : 0.9 pF TYP. * Low Noise Voltage : 90 mV TYP. 2.00.2 PACKAGE DIMENSIONS (Units: mm) 2.10.1 1.250.1 * ...164 .171 .180 .189 .199 .210 .219 .231 .241 .252 .263 .274 .288 .301 ANG 73.0 60.4 52.4 47.9 45.2 44...
Description	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD
File Size	94.85K / 13 Page	View it Online	Download Datasheet

				California Eastern Labs
Part No.	NE5520279A NE5520279A-T1-A
OCR Text	...UT POWER: +32 dBm TYP 5.7 MAX. 0.60.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX. Source 1.50.2 ...164.1 162.9 161.8 160.6 159.5 158.3 157.3 156.3 155.4 154.5 153.8 152.9 152.5 151.5 150.8 150.1 149....
Description	3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
File Size	265.19K / 8 Page	View it Online	Download Datasheet

				California Eastern Laboratories ETC[ETC] List of Unclassifed Manufacturers
Part No.	NE696M01
OCR Text	...KAGE OUTLINE M01 TOP VIEW 2.1 0.1 1.25 0.1 0.65 2.0 0.2 1.3 1 6 0.2 (All Leads) 5 T95 SIDE VIEW 2 3 4 DESCRIPTI...164 0.27 0.13 0.19 0.16 0.10 0.52 0.44 0.39 0.31 0.17 0.07 0.38 0.27 0.30 0.23 0.18 0.10 0.39 0.2...
Description	NPN SILICON HIGH FREQUENCY TRANSISTOR
File Size	103.29K / 6 Page	View it Online	Download Datasheet

				NEC
Part No.	NE24283B
OCR Text	0.6 dB TYP at 12 GHz * HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz * GATE LENGTH: 0.25 m * GATE WIDTH: 200 m * HERMETIC METAL/CERAMIC PACKAG...164.4 158.6 152.4 145.9 138.9 131.8 125.1 MAG 5.596 5.570 5.550 5.497 5.405 5.304 5.188 5.048 4.899 ...
Description	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)
File Size	39.41K / 4 Page	View it Online	Download Datasheet

				Ericsson Microelectronics
Part No.	PTF10031
OCR Text	0 GHz GOLDMOSTM Field Effect Transistor Description The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier applications ...164 -165 -165 -164 -164 -163 -163 -163 -163 -164 -164 -165 -166 -167 -168 -170 -171 -173 -174 -176 -...
Description	50 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 50瓦，1.0 GHzGOLDMOS场效应晶体管
File Size	214.70K / 6 Page	View it Online	Download Datasheet

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