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  vdss Datasheet PDF File

For vdss Found Datasheets File :: 18869    Search Time::2.14ms    
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    TOSHIBA
Part No. 2SK3438
OCR Text ...test circuit waveform i ar b vdss v dd v ds r g = 25 v dd = 90 v, l = 4.41 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as safe operating area drain-source voltage v ds (v) drain current i d (a) ...
Description Power MOSFET (N-ch 500V<vdss≤700V)

File Size 214.86K  /  6 Page

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    TOSHIBA
Part No. TK9A55DA
OCR Text ...gle pulse ?15 v 15 v i ar b vdss v dd v ds r g = 25 v dd = 90 v, l = 6.04 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as r th ? t w e as ? t ch normalized transient thermal impedance r th (t) /r th ...
Description Power MOSFET (N-ch 500V<vdss≤700V)

File Size 188.05K  /  6 Page

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    Silan Microelectronics
Part No. SVF5N60DTR
OCR Text ...in -source breakdown voltage b vdss v gs =0v, i d =250a 600 -- -- v drain-source leakage current i dss v ds =600v, v gs =0v -- -- 1.0 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold volt...
Description 600V N-CHANNEL MOSFET

File Size 490.54K  /  10 Page

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    IRF460

SEME-LAB[Seme LAB]
Part No. IRF460
OCR Text ...1) 7.92 (0.312) 12.70 (0.50) vdss ID(cont) RDS(on) 500V 21A 0.27 29.9 (1.177) 30.4 (1.197) Pin 1 - Gate 16.64 (0.655) 17.15 (0.675) Pin 2 - Source Case - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise ...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 16.77K  /  2 Page

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    TK12A53D

Toshiba Semiconductor
Part No. TK12A53D
OCR Text ...gle pulse ?15 v 15 v i ar b vdss v dd v ds r g = 25 v dd = 90 v, l = 4.5 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as r th ? t w e as ? t ch normalized transient thermal impedance r th (t) /r th (ch...
Description Field Effect Transistor

File Size 175.07K  /  6 Page

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    TK9A45D

Toshiba Semiconductor
Part No. TK9A45D
OCR Text ...test circuit waveform i ar b vdss v dd v ds drain-source voltage v ds (v) safe operating area drain current i d (a) 0.01 1 0.1 10 100 10 1000 100 100 s * 1 ms * v dss max 0.001 1 *: single nonrepetitive p...
Description Field Effect Transistor

File Size 206.60K  /  6 Page

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    Silan Microelectronics
Part No. SVF12N60STR SVF12N60FG SVF12N60K SVF12N60T
OCR Text ...ource b reakdon v oltage b vdss v gs 0v, i d 20a 6 0 0 -- -- v d rain - source leakage current i dss v ds 6 0 0 v, v gs 0v -- -- 1 . 0 a gate - s ource l eak age c urrent i gss v gs 30 v , v ds 0 v...
Description 600V N-CHANNEL MOSFET

File Size 333.13K  /  9 Page

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    Silan Microelectronics
Part No. SVD1N60BTR
OCR Text ...in -source breakdown voltage b vdss v gs =0v, i d =250a 600 -- -- v drain-source leakage current i dss v ds =600v, v gs =0v -- -- 1.0 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold...
Description 600V N-CHANNEL MOSFET

File Size 532.92K  /  10 Page

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