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  tunnel Datasheet PDF File

For tunnel Found Datasheets File :: 552    Search Time::2.672ms    
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    IDT
Part No. RC32365
OCR Text ...H, ESP, and AH+ESP (single MAC) tunnel and transport mode processing: initialization Vector (IV) insertion and extraction, HMAC checking, AH mutable field processing for both IPv4 and IPv6 packets, IPSec pad generation and checking Random ...
Description Integrated Communications Processor

File Size 470.01K  /  44 Page

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    IDT
Part No. 79RC32365
OCR Text ...H, ESP, and AH+ESP (single MAC) tunnel and transport mode processing: initialization Vector (IV) insertion and extraction, HMAC checking, AH mutable field processing for both IPv4 and IPv6 packets, IPSec pad generation and checking Random ...
Description Integrated Communications Processor

File Size 457.71K  /  44 Page

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    Macronix 旺宏
Part No. MX29F016
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F016 uses a 5.0V10% VCC supply to perform the High Reliability Erase and auto P...
Description 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY

File Size 183.33K  /  30 Page

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    MX26L3220 MX26L3220XBI-12 MX26L3220XBI-90 MX26L3220XAI-12 MX26L3220XAI-90 MX26L3220TI-12 MX26L3220TI-90 MX26L3220MI-12 M

MCNIX[Macronix International]
Part No. MX26L3220 MX26L3220XBI-12 MX26L3220XBI-90 MX26L3220XAI-12 MX26L3220XAI-90 MX26L3220TI-12 MX26L3220TI-90 MX26L3220MI-12 MX26L3220MI-90 MX26L3220XBC-12 MX26L3220XBC-90 MX26L3220XAC-12 MX26L3220XAC-90 MX26L3220TC-12 MX26L3220TC-90 MX26L3220MC-12 MX26L3220MC-90
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX26L3220 uses a 2.7V to 3.6V VCC supply to perform the High Reliability Erase and ...
Description 32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM

File Size 1,133.13K  /  38 Page

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    MX28F1000P 28F1000P

ETC
Macronix 旺宏
Part No. MX28F1000P 28F1000P
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX28F1000P uses a 12.0V 5% VPP supply to perform the Auto Program/Erase algorithms...
Description From old datasheet system
1M-BIT [128K x 8] CMOS FLASH MEMORY

File Size 206.32K  /  33 Page

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    MX29LV320C MX29LV320CBTC-70G MX29LV320CBTC-90G MX29LV320CTTC-70G MX29LV320CTTC-70 MX29LV320CTTC-90 MX29LV320CTTC-90G MX2

MXIC
MCNIX[Macronix International]
Part No. MX29LV320C MX29LV320CBTC-70G MX29LV320CBTC-90G MX29LV320CTTC-70G MX29LV320CTTC-70 MX29LV320CTTC-90 MX29LV320CTTC-90G MX29LV320CTXEI-90G MX29LV320CBTC-70 MX29LV320CBTC-90 MX29LV320CBTI-70 MX29LV320CBTI-70G MX29LV320CBTI-90 MX29LV320CBTI-90G MX29LV320CBXBC-70 MX29LV320CBXBC-70G MX29LV320CBXBC-90 MX29LV320CBXBC-90G MX29LV320CBXBI-70 MX29LV320CBXBI-70G MX29LV320CBXBI-90 MX29LV320CBXBI-90G MX29LV320CBXEC-70 MX29LV320CBXEC-70G MX29LV320CBXEC-90 MX29LV320CBXEC-90G MX29LV320CBXEI-70 MX29LV320CBXEI-70G MX29LV320CBXEI-90 MX29LV320CBXEI-90G MX29LV320CT MX29LV320CTTI-70 MX29LV320CTTI-70G MX29LV320CTTI-90 MX29LV320CTTI-90G MX29LV320CTXBC-70 MX29LV320CTXBC-70G MX29LV320CTXBC-90 MX29LV320CTXBC-90G MX29LV320CTXBI-70 MX29LV320CTXBI-70G MX29LV320CTXBI-90 MX29LV320CTXBI-90G MX29LV320CTXEC-70 MX29LV320CTXEC-70G MX29LV320CTXEC-90 MX29LV320CTXEC-90G MX29LV320CTXEI-70 MX29LV320CTXEI-70G MX29LV320CTXEI-90
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable REV. 1.0, AUG. 02, 2005 1 MX29LV320C T/B cycling. The MX29LV320C T/B uses a 2.7V to ...
Description 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

File Size 777.59K  /  62 Page

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    MXIC
Part No. MX29F400BT MX29F400BTC-90
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX29F400T/B uses a 5.0V10% VCC supply to perform the High Reliability Erase and auto Pr...
Description 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY

File Size 690.58K  /  44 Page

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    ALSC
Part No. SP1011 SP1011PB102002
OCR Text ...n Deterministic low latency per tunnel meets the requirements of real-time applications Target Applications The feature set of the SP1011 makes it ideal for a variety of computing and embedded systems including: * Enterprise LAN Switche...
Description From old datasheet system
HyperTransport Bridges

File Size 20.38K  /  2 Page

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    Macronix 旺宏
Part No. MX29F002_002N 29F002
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F002T/B uses a 5.0V 10% VCC supply to perform the High Reliability Erase and a...
Description 2M-BIT [256K x 8] CMOS FLASH MEMORY
From old datasheet system

File Size 229.72K  /  39 Page

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    Macronix 旺宏
Part No. MX29L3222 29L3222
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29L3222 uses a 3.3V 10% VCC supply to perform the Auto Erase and Auto Program al...
Description 32M-BIT [2M x 16/1M x 32] CMOS
From old datasheet system

File Size 192.79K  /  35 Page

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For tunnel Found Datasheets File :: 552    Search Time::2.672ms    
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