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  tsop2-50 Datasheet PDF File

For tsop2-50 Found Datasheets File :: 186    Search Time::2.469ms    
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    KM681002B-12 KM681002B-8 KM681002BI-12 KM681002BI-8 KM681002BJ-12 KM681002BJ-8 KM681002BJI-12 KM681002BJI-8 KM681002BT-1

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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KM681002B-12 KM681002B-8 KM681002BI-12 KM681002BI-8 KM681002BJ-12 KM681002BJ-8 KM681002BJI-12 KM681002BJI-8 KM681002BT-12 KM681002B KM681002B-10 KM681002BI-10 KM681002BJ-10 KM681002BJI-10 KM681002BT-10 KM681002BT-8 KM681002BTI-10 KM681002BTI-12 KM681002BTI-8
OCR Text ...2BJ : 32-SOJ-400 KM681002BT: 32-TSOP2-400F Preliminary PRELIMINARY CMOS SRAM GENERAL DESCRIPTION The KM681002B is a 1,048,576-bit high-...50 10 0.4 3.95 mA mA V V V Unit A A mA NOTE: The above parameters are also guaranteed at industri...
Description 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. 128Kx8位高速静态RAMV的工作),革命销出。在经营商业和工业温度范围

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    K6R1008V1B-B-L K6R1008V1B-C10 K6R1008V1B-C8 K6R1008V1B-I8 K6R1008V1B-B-P K6R1008V1B-C-L K6R1008V1B-C12 K6R1008V1B-I-P K6

Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K6R1008V1B-B-L K6R1008V1B-C10 K6R1008V1B-C8 K6R1008V1B-I8 K6R1008V1B-B-P K6R1008V1B-C-L K6R1008V1B-C12 K6R1008V1B-I-P K6R1008V1B-I10 K6R1008V1B-I12 K6R1008V1B K6R1008V1B-TP10
OCR Text ... : 32-SOJ-400 K6R1008V1B-T : 32-TSOP2-400CF Preliminary PRELIMINARY CMOS SRAM GENERAL DESCRIPTION The K6R1008V1B is a 1,048,576-bit h...50 5 0.7 0.4 V V mA mA Unit A A mA Output Low Voltage Level Output High Voltage Level VOL VOH ...
Description 128K X 8 STANDARD SRAM, 10 ns, PDSO32
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges 128Kx8位高速静态RAM.3V的工作),革命销出。在商用和工业温度范围运

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    Samsung Semiconductor Co., Ltd.
Part No. KM23C16000CET
OCR Text ...c16000c(e)t is packaged in a 44-tsop2. general description features switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word ...50 m a(max.) fully static operation all inputs and outputs ttl compatible three state outputs ...
Description 16M-Bit (2Mx8 /1Mx16)CMOS Mask ROM(16M(2Mx8 /1Mx16) CMOS掩膜ROM) 1,600位(2Mx8 / 1Mx16)的CMOS掩模ROM,600位(2Mx8 / 1Mx16)的CMOS掩膜光盘

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    K6T8008C2M K6T8008C2M-B K6T8008C2M-F K6T8008C2M-RB55 K6T8008C2M-RB70 K6T8008C2M-RF55 K6T8008C2M-RF70 K6T8008C2M-TB55 K6T

SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K6T8008C2M K6T8008C2M-B K6T8008C2M-F K6T8008C2M-RB55 K6T8008C2M-RB70 K6T8008C2M-RF55 K6T8008C2M-RF70 K6T8008C2M-TB55 K6T8008C2M-TB70 K6T8008C2M-TF55 K6T8008C2M-TF70
OCR Text ...L Compatible * Package Type: 44-TSOP2-400F/R CMOS SRAM GENERAL DESCRIPTION The K6T8008C2M families are fabricated by SAMSUNGs advanced ...50 80 Unit A A mA mA mA V V mA A 4 Revision 1.00 February 2000 K6T8008C2M Family AC OPERAT...
Description 1Mx8 bit Low Power and Low Voltage CMOS Static RAM

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    K6R4008C1C-C K6R4008C1C-C10 K6R4008C1C-C12 K6R4008C1C-C15 K6R4008C1C-E K6R4008C1C-E10 K6R4008C1C-E12 K6R4008C1C-E15 K6R4

Samsung semiconductor
Part No. K6R4008C1C-C K6R4008C1C-C10 K6R4008C1C-C12 K6R4008C1C-C15 K6R4008C1C-E K6R4008C1C-E10 K6R4008C1C-E12 K6R4008C1C-E15 K6R4008C1C-I K6R4008C1C-I10 K6R4008C1C-I12 K6R4008C1C-I15 K6R4008C1C-TC12
OCR Text ...J : 36-SOJ-400 K6R4008C1C-T: 44-TSOP2-400BF GENERAL DESCRIPTION The K6R4008C1C is a 4,194,304-bit high-speed Static Random Access Memory...50 +5.0V DOUT VL = 1.5V ZO = 50 30pF* DOUT 255 480 5pF* * Capacitive Load consists o...
Description CMOS SRAM
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.

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    K6R4008V1C-C K6R4008V1C-C10 K6R4008V1C-C12 K6R4008V1C-C15 K6R4008V1C-I K6R4008V1C-I10 K6R4008V1C-I12 K6R4008V1C-I15 K6R4

Samsung semiconductor
Part No. K6R4008V1C-C K6R4008V1C-C10 K6R4008V1C-C12 K6R4008V1C-C15 K6R4008V1C-I K6R4008V1C-I10 K6R4008V1C-I12 K6R4008V1C-I15 K6R4008V1C-L K6R4008V1C-P
OCR Text ... : 36-SOJ-400 K6R4008V1C-T : 44-TSOP2-400BF CMOS SRAM GENERAL DESCRIPTION The K6R4008V1C is a 4,194,304-bit high-speed Static Random ...50 +3.3V DOUT VL = 1.5V ZO = 50 30pF* DOUT 353 319 5pF* * Capacitive Load consists o...
Description 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

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    BS616LV2010 BS616LV2010EC BS616LV2010EI

Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
Part No. BS616LV2010 BS616LV2010EC BS616LV2010EI
OCR Text ...100 8uA 12uA 25mA 30mA TSOP2-44 TSOP2-44 PIN CONFIGURATIONS BLOCK DIAGRAM A8 A13 A15 A16 A14 A12 A4 A3 A2 A1 A0 CE DQ0 DQ...50 ---35 30 30 -- 100 ----15 15 15 0 0 0 15 ------------- -100 100 50 60 ---40 35 35 -- ...
Description Very Low Power/Voltage CMOS SRAM 128K X 16 bit

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    IS41LV44002B IS41LV44002B-50JI IS41LV44002B-50JL IS41LV44002B-50JLI IS41LV44002B-50T IS41LV44002B-50TI IS41LV44002B-50TL

Integrated Silicon Solution, Inc
Part No. IS41LV44002B IS41LV44002B-50JI IS41LV44002B-50JL IS41LV44002B-50JLI IS41LV44002B-50T IS41LV44002B-50TI IS41LV44002B-50TL IS41LV44002B-50TLI IS41LV44002B-50J
OCR Text ... 24-pin 300-mil SOJ and 300-mil TSOP2 with JEDEC standard pinouts. PRODUCT SERIES OVERVIEW Part No. IS41LV44002B Refresh 2K Voltage 3.3V...50 50 13 25 20 84 Unit ns ns ns ns ns PIN CONFIGURATION: 24-pin SOJ, TSOP2 VDD I/O0 I/O1 WE RAS ...
Description 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

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    Samsung Electronic
Part No. K6R1004C1D K6R1004C1D-JC12
OCR Text ...10/12 5 10/12 j : 32-soj t : 32-tsop2 k6r1008v1d-j(t)c(i) 08/10 3.3 8/10 64k x16 k6r1016c1d-j(t,e)c(i) 10/12 5 10/12 j : 44-soj t : 44-tsop2...50 w z o = 50 w v l = 1.5v 30pf* * capacitive load consists of all components of the test envi...
Description 256K X 4 STANDARD SRAM, 12 ns, PDSO32
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet

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Part No. KM644002BJ-12000
OCR Text ... km644002bt : 32-tsop2-400f pin function pin name pin function a 0 - a 19 address inputs we write enable cs chip select oe...50 ma i sb1 f=0mhz, cs 3 v cc -0.2v, v in 3 v cc -0.2v or v in 0.2v - 10 ma output low voltage le...
Description 1M X 4 STANDARD SRAM, 12 ns, PDSO32

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