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  trh Datasheet PDF File

For trh Found Datasheets File :: 311    Search Time::1.484ms    
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    K4S511632C K4S511632C-KC K4S511632C-L1H K4S511632C-L1L K4S511632C-L75 K4S511632C-L7C K4S511632C-KC_L75 K4S511632C-KC_L1H

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S511632C K4S511632C-KC K4S511632C-L1H K4S511632C-L1L K4S511632C-L75 K4S511632C-L7C K4S511632C-KC_L75 K4S511632C-KC_L1H K4S511632C-KC_L1L K4S511632C-KC_L7C K4S511632C-KC/L1H K4S511632C-KC/L1L K4S511632C-KC/L75 K4S511632C-KC/L7C
OCR Text ...se time Output fall time Symbol trh tfh trh tfh Condition Measure in linear region : 1.2V ~1.8V Measure in linear region : 1.2V ~1.8V Measure in linear region : 1.2V ~1.8V Measure in linear region : 1.2V ~1.8V Min 1.37 1.30 2.8 2.0 3.9 2.9 ...
Description 8M x 16Bit x 4 Banks Synchronous DRAM Data Sheet
DDP 512Mbit SDRAM 12兆内

File Size 130.41K  /  11 Page

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    K4S511632M K4S511632M-TC K4S511632M-TL1H K4S511632M-TL1L K4S511632M-TL75

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S511632M K4S511632M-TC K4S511632M-TL1H K4S511632M-TL1L K4S511632M-TL75
OCR Text ...se time Output fall time Symbol trh tfh trh tfh Condition Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Min 1.37 1.30 2.8 2.0 3.9 ...
Description 512Mbit SDRAM

File Size 110.24K  /  11 Page

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    W551C080 W551C060 W551C040 W551C020 W551C010 W551C005 W551C002 W551CXXX

Winbond
Part No. W551C080 W551C060 W551C040 W551C020 W551C010 W551C005 W551C002 W551CXXX
OCR Text ...ITION FADDR FCR TI TCFA TRA TAS trh Read mode Read mode Address shift-in Read mode MIN. 1 10 250 0 TYP. MAX. 1 1 500 UNIT MHz MHz uS uS nS nS nS Winbond Electronics Corp. 10 Release Date: January 2, 2001 W551Cxxx Data Sheet T...
Description Interactive Toy Family
From old datasheet system
serial audio memory
Voice & Speech IC Interactive Toy Serial Voice Memory

File Size 125.33K  /  15 Page

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    MSM514212 MSM514212-28ZS MSM514212-34ZS MSM514212-50ZS

OKI electronic components
OKI[OKI electronic componets]
Part No. MSM514212 MSM514212-28ZS MSM514212-34ZS MSM514212-50ZS
OCR Text ...R setup, and hold times tRS and trh are referenced to the rising edge of WCK. Each write operation, which begins after WR, must contain at least 18 active write cycles, i.e. WCK cycles while WE is high. Read Address Pointer Reset (RR) If RR...
Description From old datasheet system
5,048-Word x 8-Bit Line Memory

File Size 1,393.08K  /  15 Page

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    FS75R12W2T4B11

Infineon Technologies AG
Part No. FS75R12W2T4B11
OCR Text ...+,-.3/01+,/3/c1+/ .trh 3!" s $%n% % /01+!/3/c1+/3()*+,-. 5012 !3 %9 >$%n% '% ' /01+/3/c1+/3()*...
Description EasyPACK 2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode

File Size 427.45K  /  8 Page

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    M81713FP M81713FP09

Mitsubishi Electric Semiconductor
Part No. M81713FP M81713FP09
OCR Text ...DEAD VPonr tPonr(FIL) tdLH tdHL trh tfH trL tfL Parameter Floating Supply Leakage Current VBS Standby Current VCC Standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshol...
Description HIGH VOLTAGE HALF BRIDGE DRIVER

File Size 71.61K  /  5 Page

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    Cypress
Part No. CY7C344B 7C344B
OCR Text ...ELAY tIN LOGIC ARRAY tRSU DELAY trh tLAD SYSTEM CLOCK DELAYtICS I/O I/O DELAY tIO CLOCK DELAY tIC REGISTER OUTPUT DELAY OUTPUT tRD tCOMB tLATCH tOD tXZ tZX INPUT I/O FEEDBACK DELAY tFD C344B-10 Figure 1. CY7C344B Timing Mo...
Description 32-Macrocell MAX?EPLD
From old datasheet system

File Size 198.24K  /  11 Page

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    Exar, Corp.
Part No. XR-T6165
OCR Text ...p time 0 trxl - 100 ns figure 3 trh rx2mhz rising edge to ts falling edge hold time 0 trxl - 100 ns figure 3 tdrs ts rising edge to leading edge of pcmout d0 bit delay 10 ns figure 3 tdrh ts falling edge to trailing edge of pcmout d7 bit h...
Description Codirectional Digital Data Processor 同向数字数据处理

File Size 162.30K  /  16 Page

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    K4S160822D K4S160822DT-G_FL K4S160822DT-G_F10 K4S160822DT-G_F7 K4S160822DT-G_F8 K4S160822DT-G_FH K4S160822DT-G/F8 K4S160

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S160822D K4S160822DT-G_FL K4S160822DT-G_F10 K4S160822DT-G_F7 K4S160822DT-G_F8 K4S160822DT-G_FH K4S160822DT-G/F8 K4S160822DT-G/F10 K4S160822DT-G/FH K4S160822DT-G/F7 K4S160822DT-G/FL
OCR Text ...se time Output fall time Symbol trh tfh trh tfh Condition Measure in linear region : 1.2V ~1.8V Measure in linear region : 1.2V ~1.8V Measure in linear region : 1.2V ~1.8V Measure in linear region : 1.2V ~1.8V Min 1.37 1.30 2.8 2.0 3.9 2.9 ...
Description 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

File Size 1,178.64K  /  46 Page

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For trh Found Datasheets File :: 311    Search Time::1.484ms    
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