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  tbga Datasheet PDF File

For tbga Found Datasheets File :: 353    Search Time::2.391ms    
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    pmc
Part No. 1990553
OCR Text ...bytes. Package changed from 432 tbga to 576 tbga to add power/ground balls. Documented separate 1.5V supply for the DRAM. Lower bound of temperature range changed to 0 degrees C. Address map adjusted for easier decode. Added APS cell routin...
Description From old datasheet system

File Size 2,240.84K  /  432 Page

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    M58LW064D 8938

STMicroelectronics
Part No. M58LW064D 8938
OCR Text ... bit Unique Code in OTP area tbga s tbga64 (ZA) 10 x 13 mm s s s PROGRAM and ERASE SUSPEND COMMON FLASH INTERFACE 100, 000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE - Manufacturer Code: 0020h - Device Code M58LW064D...
Description 64 MBIT(8MB X8, 4MB X16, UNIFORM BLOCK)3V SUPPLY FLASH MEMORY
From old datasheet system

File Size 393.35K  /  51 Page

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    ATMEL[ATMEL Corporation]
Part No. PC8240NBSP PC8240 PC8240VTPU200ETC
OCR Text ... 3.6V 352 Tape Ball Grid Array (tbga) tbga352 Tape Ball Grid Array Rev. 2149A-HIREL-05/02 1 General Description Block Diagram Figure 1. Block Diagram PC8240 Additional features: * JTAG/COP interface * Power management 603e Proc...
Description Integrated Processor Family
From old datasheet system
Integrated RISC Processor, 200 MHZ

File Size 343.02K  /  42 Page

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    K6F2016U4E K6F2016U4E-F DSK6F2016U4E DS_K6F2016U4E

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6F2016U4E K6F2016U4E-F DSK6F2016U4E DS_K6F2016U4E
OCR Text ... - Remove "A1 Index Mark" of 48-tbga package bottom side Revise - Changed 48-tbga vertical dimension E1(Typical) 0.55mm to 0.58mm E2(Typical) 0.35mm to 0.32mm Draft Date February 21, 2001 April 30, 2001 Remark Preliminary Final 2...
Description 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

File Size 157.13K  /  9 Page

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    Samsung
Part No. K9F2808U0C
OCR Text ...History 0.0 1.0 Initial issue. tbga PKG Dimension Change 48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm 1.A3 Pin assignment of tbga Package is changed.(Page 4) (before) NC --> (after) Vss 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for...
Description IC,EEPROM,NAND FLASH,16MX8,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system

File Size 317.17K  /  32 Page

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    K9F5608UOC K9F56XXQ0C K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-

SAMSUNG[Samsung semiconductor]
Part No. K9F5608UOC K9F56XXQ0C K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616U0C-Y
OCR Text ...tial issue. 1.Pin assignment of tbga dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page...
Description 32M x 8 Bit 16M x 16 Bit NAND Flash Memory

File Size 668.51K  /  41 Page

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    K1S321615M K1S321615M-E K1S321615M-EE10

Samsung Electronic
Samsung semiconductor
Part No. K1S321615M K1S321615M-E K1S321615M-EE10
OCR Text ...hange package type from FBGA to tbga. - Improve operating current from 30mA to 25mA. - Change input and output reference voltage from 1.1V to 1.5V at AC test condition. - Expand max operating voltage from 3.0V to 3.3V. - Expand max operatin...
Description 2M x 16 bit Uni-Transistor CMOS RAM Data Sheet
2Mx16 bit Uni-Transistor Random Access Memory

File Size 237.70K  /  12 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K5A3380YTC-T755 K5A3380YBC-T755 K5A3280YTC-T855 K5A3280YBC-T855 K5A3280YTC-T755 K5A3280YBC-T755 K5A3X80YTC K5A3380YBC-T855 K5A3380YTC-T855
OCR Text ... -40C ~ 85C * Package : 69-ball tbga Type - 8 x 11mm, 0.8 mm pitch 1.2mm(max.) Thickness GENERAL DESCRIPTION The K5A3x80YT(B)C featuring single 3.0V power supply is a Multi Chip Package Memory which combines 32Mbit Dual Bank Flash and 8...
Description MCP MEMORY

File Size 620.40K  /  45 Page

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    K6F4008U2G-F K6F4008U2G

Samsung Semiconductor Co., Ltd.
Samsung Electronic
Part No. K6F4008U2G-F K6F4008U2G
OCR Text ...te Outputs Package Type: 48(36)-tbga-6.00x7.00 PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby (ISB1, Typ.) 3A2) Operating (ICC1, Max) 4mA PKG Type K6F4008U2G-F Industrial(-40~85C) ...
Description 512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM 12k × 8位超低功耗和低电压的CMOS静态RAM

File Size 154.51K  /  9 Page

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    K6R4016C1D-JC10 K6R4008V1D-TI10 K6R4008V1D-UI10 K6R4008V1D-JC08 K6R4008V1D-JC10 K6R4008V1D-JI08 K6R4008V1D-JI10 K6R4008V

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6R4016C1D-JC10 K6R4008V1D-TI10 K6R4008V1D-UI10 K6R4008V1D-JC08 K6R4008V1D-JC10 K6R4008V1D-JI08 K6R4008V1D-JI10 K6R4008V1D-KC08 K6R4008V1D-KC10 K6R4008V1D-KI08 K6R4008V1D-KI10 K6R4008V1D-TC08 K6R4008V1D-TC10 K6R4008C1D-JC10 K6R4016C1D-EC10 K6R4016C1D-EC8 K6R4016C1D-EI10 K6R4016C1D-EI8 K6R4016C1D-EL10 K6R4016C1D-EL8 K6R4016C1D-EP10 K6R4016C1D-EP8 K6R4016C1D-JC8 K6R4016C1D-JI10 K6R4016C1D-JI8 K6R4016C1D-JL10 K6R4016C1D-JL8 K6R4016C1D-JP10 K6R4016C1D-UP8 K6R4004C1D-JC10 K6R4004C1D-JI10 K6R4004C1D-KC10 K6R4004C1D-KI10 K6R4004V1D-JC08 K6R4004V1D-JC10 K6R4004V1D-JI08 K6R4004V1D-JI10 K6R4004V1D-KC08 K6R4004V1D-KC10 K6R4004V1D-KI08 K6R4004V1D-KI10 K6R4008C1D-JI10 K6R4008C1D-KC10 K6R4008C1D-KI10 K6R4008C1D-TC10 K6R4008C1D-TI10 K6R4008C1D-UC10 K6R4008C1D-UI10 K6R4008V1D-TI08 K6R4008V1D-UC08 K6R4008V1D-UC10 K6R4008V1D-UI08 K6R4016C1D K6R4016C1D-JP8 K6R4016C1D-KC10 K6R4016C1D-KC8 K6R4016C1D-KI10 K6R4016C1D-KI8 K6R4016C1D-KL10 K6R4016C1D-KL8 K6R4016C1D-KP10 K6R4016C1D-KP8 K6R4016C1D-TC10 K6R4016C1D-TC8 K6R4016C1D-TI10 K6R4016C1D-TI8 K6R4016C1D-TL10 K6R4016C1D-TL8 K6R4016C1D-TP10 K6R4016C1D-TP8 K6R4016C1D-UC10 K6R4016C1D-UC8 K6R4016C1D-UI10 K6R4016C1D-UI8 K6R4016C1D-UL10 K6R4016C1D-UL8 K6R4016C1
OCR Text ...44-TSOP2 U: 44-TSOP2(LF) E : 48-tbga CMOS SRAM Temp. & Power C : Commercial Temperature ,Normal Power Range I : Industrial Temperature ,Normal Power Range L : Commercial Temperature ,Low Power Range P : Industrial Temperature ,Low Po...
Description 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. 256Kx16位高速静态RAM.0V操作)。在经营商业和工业温度范围
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. 256Kx16位高速静RAM.0V操作)。在经营商业和工业温度范围
CAP,ELECTRO,1000UF,25V
DIODE,RECT,1A 400V SMD MELF
PCB Relay; Contacts:SPDT; Coil Voltage AC Max:120V; Contact Carry Current:30A; Coil Resistance:3000ohm; Mounting Type:PCB; Relay Terminals:Quick Connect; Relay Mounting:PC Board; Contact Rating:30A; Switch Function:SPDT
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 470uF; Voltage: 63V; Case Size: 12.5x20 mm; Packaging: Bulk

File Size 138.58K  /  12 Page

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