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List of Unclassifed Man...
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| Part No. |
698-3-R100KB
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| OCR Text |
substrates model 694, 698, 699 series www.bitechnologies.com www.irctt.com www.welwyn-tt.com general note tt electronics reserves the right to make changes in product specifcation without notice or liability. all information is subject ... |
| Description |
Nichrome Resistor Networks on Ceramic substrates
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| File Size |
191.68K /
3 Page |
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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| OCR Text |
substrates product specifications 4h silicon carbide (n/p-type) 6h silicon carbide (n/p-type)
page 2 ? effective december 1998 ? revised march 2003 properties and specifications for silicon carbide applications: ? high frequency power dev... |
| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
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HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC282
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| OCR Text |
...(5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface o... |
| Description |
GaAs MMIC LOW NOISE AMPLIFIER 36 - 40 GHz
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| File Size |
108.21K /
6 Page |
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Hittite Microwave Corpo...
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| Part No. |
HMC557
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| OCR Text |
... mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surf... |
| Description |
GaAs MMIC FUNDAMENTAL MIXER, 2.5 - 7.0 GHz
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| File Size |
227.75K /
6 Page |
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Hittite Microwave Corpo...
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| Part No. |
HMC-ABH241
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| OCR Text |
... mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surf... |
| Description |
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz
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| File Size |
217.63K /
6 Page |
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Hittite Microwave Corpo...
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| Part No. |
HMC594
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| OCR Text |
... mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surfac... |
| Description |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz
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| File Size |
290.00K /
6 Page |
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