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1N4248GP 7806ACT 1UNB1 TA0664A 2424D 02255 78K0R C1000
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  rg-8 u Datasheet PDF File

For rg-8 u Found Datasheets File :: 14460    Search Time::1.5ms    
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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...DD = -28V --- I D = -38A ns --- RG = 2.5 --- RD = 0.72, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die...8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP 1000 -ID , D ra in -to -S o u rce C u rre...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...VDD = -28V --- ID = -16A ns --- RG = 6.8 --- RD = 1.6, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V SD t rr Q...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...VDD = -28V --- ID = -16A ns --- RG = 6.8 --- RD = 1.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings a...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... VDD = 50V --- ID = 9.0A ns --- RG = 12 --- RD = 5.5, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 640 --- VGS = 0V 160 -...8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I , D rain-to-S ource C urrent (A ) D 10 I ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    ADPOW[Advanced Power Technology]
Part No. APTGF350A60
OCR Text ...VGE = 15V VBus = 400V IC = 360A RG = 1.25W Min 600 Typ Max 200 4000 2.5 5 300 unit V A V V nA unit nF 2.0 2.2 3 Dynamic Char...8 unit A V trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC APTGF350A60 - Re...
Description Phase Leg - IGBT
Phase leg NPT IGBT Power Module

File Size 286.81K  /  6 Page

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    IRFI4019HG-117P

International Rectifier
Part No. IRFI4019HG-117P
OCR Text ...ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max h V m: nC nC C G1 S1/D2 G2 S2 D1 TO-220 Full-Pak 5 PIN G1, G2 D1, D2 S1...8.7 6.2 34 77 18 7.2 0.15 -55 to + 150 units V A VDS VGS ID @ TC = 25C ID @ TC = 100C IDM EAS...
Description Integrated Half-Bridge Package

File Size 266.61K  /  7 Page

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    ADPOW[Advanced Power Technology]
Part No. APTGF350SK60
OCR Text ...VGE = 15V VBus = 400V IC = 360A RG = 1.25W Min 600 Typ Max 200 4000 2.5 5 300 unit V A V V nA unit nF 2.0 2.2 3 Dynamic Char...8 unit A V trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC APTGF350SK60 - R...
Description Buck Chopper - IGBT
Buck chopper NPT IGBT Power Module

File Size 286.96K  /  6 Page

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    NP36N055HLE NP36N055HHE NP36N055IHE

NEC
Part No. NP36N055HLE NP36N055HHE NP36N055IHE
OCR Text ...ote2 2. Starting Tch = 25 C, RG = 25 , VGS = 20 V 0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C...8 6 4 VDS ID = 36 A 2 30 40 50 60 70 80 0 VGS - Gate to Source Voltage - V 70 60 50 40 30 20 10 ...
Description Nch MOS FET for High-speed switching

File Size 69.38K  /  8 Page

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    IRF7413QPBF10

International Rectifier
Part No. IRF7413QPBF10
OCR Text ...GS(th) gfs IDSS IGSS Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Tem...8.6 50 52 46 1800 680 240 Max --- --- 0.011 0.018 3.0 --- 12 25 -100 100 79 9.2 23 3.7 --- --- -...
Description HEXFETPOWERMOSFET

File Size 236.37K  /  9 Page

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    ADPOW[Advanced Power Technology]
Part No. APT75GP120J
OCR Text ...250 200 150 100 50 0 VCE = 600V RG = 5 L = 100 H VGE =10V,TJ=25C VGE =15V,TJ=25C VGE =10V,TJ=125C 30 VGE= 10V 20 VGE= 15V 10...8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 ...
Description MOSFET
POWER MOS 7 IGBT

File Size 101.25K  /  6 Page

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