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  rg-6 u Datasheet PDF File

For rg-6 u Found Datasheets File :: 15074    Search Time::2.703ms    
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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...DD = -28V --- I D = -38A ns --- RG = 2.5 --- RD = 0.72, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die...6 V TJ = 25C, IS = -38A, V GS = 0V --- 89 130 ns TJ = 25C, IF = -38A --- 230 350 C di/dt = -100A/s ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...VDD = -28V --- ID = -16A ns --- RG = 6.8 --- RD = 1.6, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V SD t rr Q...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...VDD = -28V --- ID = -16A ns --- RG = 6.8 --- RD = 1.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings a...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... VDD = 50V --- ID = 9.0A ns --- RG = 12 --- RD = 5.5, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 640 --- VGS = 0V 160 -...6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I , D rain-to-S ource C urrent (A ) D 10 I , D rain-t...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

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    IRF630NLPBF

International Rectifier
Part No. IRF630NLPBF
OCR Text ...VDD = 100V --- ID = 5.4A ns --- RG = 13 --- RD = 18 D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die conta...6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP ...
Description HEXFET Power MOSFET

File Size 314.05K  /  11 Page

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    IRLD110 IRLD110PBF SIHLD110 SIHLD110-E3

Vishay Siliconix
Part No. IRLD110 IRLD110PBF SIHLD110 SIHLD110-E3
OCR Text ...starting TJ = 25 C, L = 183 mH, RG = 25 , IAS = 2.0 A (see fig. 12). c. ISD 5.6 A, dI/dt 75 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91309 S-...
Description Power MOSFET

File Size 1,507.71K  /  8 Page

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    IRLD024 IRLD024PBF SIHLD024-E3 SIHLD024

Vishay Siliconix
Part No. IRLD024 IRLD024PBF SIHLD024-E3 SIHLD024
OCR Text ... starting TJ = 25 C, L = 16 mH, RG = 25 , IAS = 2.5 A (see fig. 12). c. ISD 17 A, dI/dt 140 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91308 S-...
Description Power MOSFET

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    IRL540 IRL540PBF SIHL540-E3 SIHL540

Vishay Siliconix
Part No. IRL540 IRL540PBF SIHL540-E3 SIHL540
OCR Text ... starting TJ = 25 C, L = 841 H, RG = 25 , IAS = 28 A (see fig. 12c). c. ISD 28 A, dI/dt 170 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91300 S-...
Description Power MOSFET

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    IRF6215L IRF6215S

International Rectifier
Part No. IRF6215L IRF6215S
OCR Text ...- VDD = -75V --- ID = -6.6A --- RG = 6.8 --- RD = 12, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 860 --- VGS = 0V 220 --- pF VDS = -25V 130 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM ...
Description (IRF6215L/S) HEXFET Power MOSFET

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    IRFU024 IRFU024PBF SIHFR024-E3 IRFR024PBF SIHFR024T SIHFR024T-E3 SIHFR024TL IRFR024TR IRFR024TRL IRFR024TRPBF IRFR024 SI

Vishay Siliconix
Part No. IRFu024 IRFu024PBF SIHFR024-E3 IRFR024PBF SIHFR024T SIHFR024T-E3 SIHFR024TL IRFR024TR IRFR024TRL IRFR024TRPBF IRFR024 SIHFu024 SIHFu024-E3
OCR Text ... starting TJ = 25 C, L = 541 H, RG = 25 , IAS = 14 A (see fig. 12). c. ISD 17 A, dI/dt 110 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). THERMAL RESISTANCE RATINGS PARAMETER M...
Description Power MOSFET

File Size 1,982.84K  /  8 Page

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