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  rg-58 u Datasheet PDF File

For rg-58 u Found Datasheets File :: 1671    Search Time::1.656ms    
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    IXTM24N50 IXTH21N50 IXTM21N50 IXTH24N50

IXYS[IXYS Corporation]
Part No. IXTM24N50 IXTH21N50 IXTM21N50 IXTH24N50
OCR Text ...VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 33 65 30 160 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 28 75 30 45 80 40 190 40 85 0.4...58 13.33 R1 3.33 4.77 s 16.64 17.14 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs a...
Description MegaMOSFET

File Size 107.29K  /  4 Page

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    IXTM75N10 IXTH75N10 IXTH67N10 IXTM67N10 IXTM75N100

JFETs
IXYS[IXYS Corporation]
Part No. IXTM75N10 IXTH75N10 IXTH67N10 IXTM67N10 IXTM75N100
OCR Text ...VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 60 100 30 180 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 30 90 60 110 140 60 260 70 160...58 13.33 R1 3.33 4.77 s 16.64 17.14 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs a...
Description    MegaMOSFET
Receiver IC; Supply Voltage:5V; Package/Case:28-SOIC; Interface Type:Serial; Leaded Process Compatible:No; No. of Channels:7; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5V; Mounting Type:Surface Mount RoHS Compliant: No
Receiver IC; Package/Case:28-TSSOP; Current Rating:2.8mA; Interface Type:Serial; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5V; Mounting Type:Surface Mount; Voltage Rating:3.3V RoHS Compliant: No
32-Bit Microcontroller IC; Controller Family/Series:(ARM9); Memory Size, RAM:16MB; No. of I/O Pins:24; No. of PWM Channels:1; Clock Speed:200MHz; Interface:AC97, I2S, SPI, uART, uSB; Package/Case:208-LQFP; A/D Converter:12 Bits RoHS Compliant: Yes
IC ARM920T MCu 200MHZ 272-TFBGA
1000V HiPerFET power MOSFET

File Size 110.59K  /  4 Page

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    MTP55N06 MTP55N06Z MTP55N06Z_D ON2627 ON2626

Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP55N06 MTP55N06Z MTP55N06Z_D ON2627 ON2626
OCR Text ..., Peak IL = 55 Apk, L = 0.3 mH, RG = 25 ) Thermal Resistance -- Junction-to-Case Thermal Resistance -- Junction-to-Ambient Maximum Lead Temp...58 0.62 0.66 0.70 0.74 0.78 0.82 0.86 0.90 0.94 VSD, SOuRCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Re...
Description From old datasheet system
TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm

File Size 139.95K  /  6 Page

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    10ETF02STRL 10ETF02STRR 10ETF06STRL 10ETF06STRR 10ETF02S 10ETF06S 10ETF08STRR 10ETF04S 10ETF12STRR 10ETF 10ETF08STRL 10E

Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
Part No. 10ETF02STRL 10ETF02STRR 10ETF06STRL 10ETF06STRR 10ETF02S 10ETF06S 10ETF08STRR 10ETF04S 10ETF12STRR 10ETF 10ETF08STRL 10ETF10S 10ETF10STLR 10ETF10STRR 10ETF12S 10ETF12STLR 10ETF04STRL 10ETF04STRR
OCR Text ... um re ver se re co very c ha rg e - q rr (c) i = 20 a fm 2 a 10etf..s series t = 25 c j 0 0.5 1 1.5 2 2.5 0 40 80 120 16 0 200 10...58 ) 15.49 (0 .61 ) 1.40 (0.055) 1.14 (0.045) 3x 0.93 (0.37) 0.69 (0 .27) 2x 11.43 (0 .45) 17.78 (0....
Description DIODE 10 A, 600 V, SILICON, RECTIFIER DIODE, D2PAK-3, Rectifier Diode
FAST SOFT RECOVERY RECTIFIER DIODE 快速软恢复整流二极
200V Fast Recovery Diode in a D2-Pak package
400V Fast Recovery Diode in a D2-Pak package
600V Fast Recovery Diode in a D2-Pak package

File Size 129.57K  /  8 Page

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    APT6027HVR

ADPOW[Advanced Power Technology]
Part No. APT6027HVR
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 4300 525 220 185 23 85 14 12 55 10 5160 735 330 275 35 125 28 28 80 20 ns n...58 (.535) 17.96 (.707) 17.70 (.697) Drain 19.05 (0.750) 12.70 (0.500) Source Gate 3.56 (.1...
Description POWER MOS V 600V 20A 0.270 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.13K  /  4 Page

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    APT6037HVR

ADPOW[Advanced Power Technology]
Part No. APT6037HVR
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 3450 403 155 140 19 68 12 12 40 8 4140 565 235 210 30 100 24 24 60 16 ns nC...58 (.535) 17.96 (.707) 17.70 (.697) Drain 19.05 (0.750) 12.70 (0.500) Source Gate 3.56 (.1...
Description POWER MOS V 600V 15.5A 0.370 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.63K  /  4 Page

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    DCR1675SZ48 DCR1675SZ52 DCR1675SZ DCR1675SZ49 DCR1675SZ50 DCR1675SZ51

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DCR1675SZ48 DCR1675SZ52 DCR1675SZ DCR1675SZ49 DCR1675SZ50 DCR1675SZ51
OCR Text ...C Tj = 25oC, VD = 5V Tj = 25oC, Rg-k = Repetitive 50Hz Non-repetitive Typ. Max. 500 1000 150 300 1.0 0.15 1.1 650 200 units mA V/s A/s A/s ...58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. uK, S...
Description TVS 14V 0.4J 32V-CV AXIAL .17X.10 T&R
Phase Control Thyristor

File Size 108.95K  /  8 Page

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    HFA30TA60C

IRF[International Rectifier]
Part No. HFA30TA60C
OCR Text ...s L = 100H HIGH-SPEED SWITCH Rg = 25 ohm CuRRENT MONITOR FREE-WHEEL DIODE + Vd = 50V I L(PK) DuT DECAY TIME V (AVAL) V R(RATED) ...58) 123 14.09 (0.55) 13.47 (0.53) 3.96 (0.16) 3.55 (0.14) 2.04 (0.080) MAX. 1.40 (0.05) 1.15 (0.04) ...
Description 600V 30A HEXFRED Common Cathode Diode in a TO-220AB package
ultrafast, Soft Recovery Diode
ultrafast/ Soft Recovery Diode

File Size 185.47K  /  6 Page

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    NTD110N02R NTD110N02RG NTD110N02RT4 NTD110N02RT4G NTD110N02R-001 NTD110N02R-001G

ONSEMI[ON Semiconductor]
Part No. NTD110N02R NTD110N02RG NTD110N02RT4 NTD110N02RT4G NTD110N02R-001 NTD110N02R-001G
OCR Text ...Vdc, IL = 15.5 Apk, L = 1.0 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, (1/8 from case for 10 s) Symbol VDSS VGS RqJC PD...58 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E A S 1 2 3 Z u F L D 2 ...
Description Power MOSFET 12.5 A, 24 V, 0.0062 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 110 Amps, 24 volts, N-channel, DPAK

File Size 64.15K  /  8 Page

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    NTD23N03R NTD23N03R-1 NTD23N03R-1G NTD23N03RG NTD23N03RT4 NTD23N03RT4G NTD23N03R-001

ONSEMI[ON Semiconductor]
Part No. NTD23N03R NTD23N03R-1 NTD23N03R-1G NTD23N03RG NTD23N03RT4 NTD23N03RT4G NTD23N03R-001
OCR Text ... Vdc, VDD = 10 Vdc, ID = 6 Adc, RG = 3 W) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 2.0 14.9 9.9 2.0 3.76 1.7 1.6 - - - - - - - nC ns ( (V...58 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E A S 1 2 3 Z u F L D 2 ...
Description Power MOSFET 23A, 25V, N-Channel DPAK
23 Amps / 25 Volts / N-Channel DPAK
23 Amps, 25 Volts, N−Channel DPAK
23 Amps, 25 Volts, N-Channel DPAK

File Size 64.07K  /  8 Page

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For rg-58 u Found Datasheets File :: 1671    Search Time::1.656ms    
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