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Vishay Semiconductors
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Part No. |
CPV364M4K
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OCR Text |
...emiconductors advanced line of ims (insulated metal substrate) power modules. these modules ar e more efficient than comparable bipolar t...t c = 90 c 11 a rms t j 125 c supply voltage 360 v dc power factor 0.8 modulation depth (see fig. 1... |
Description |
Trans IGBT Module N-CH 600V 24A 13-Pin IMS-2
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File Size |
237.22K /
11 Page |
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it Online |
Download Datasheet |
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International Rectifier, Corp.
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Part No. |
CPV363M4F
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OCR Text |
...al rectifier's advanced line of ims (insulated metal substrate) power modules. these modules are more efficient than comparable bipolar tr...t j temperature coeff. of breakdown voltage CCC 0.69 CCC v/c v ge = 0v, i c = 1.0ma v ce(on) colle... |
Description |
600V Fast 1-8 kHz 3-Phase Bridge IGBT in a IMS-2 package IGBT SIP MODULE IGBT的SIP协议模块
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File Size |
269.63K /
10 Page |
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it Online |
Download Datasheet |
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VISHAY INTERTECHNOLOGY INC
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Part No. |
CPV362M4FPBF
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OCR Text |
...he ke y to the advanced line of ims (insulated metal substrate) power modules. these modules are more efficient than comparable bipolar tr...t he familiar power mosfet. this superior technology has now been coupled to a state of the art mate... |
Description |
8.8 A, 600 V, N-CHANNEL IGBT
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File Size |
247.29K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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