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Intersil, Corp. Intersil Corporation
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Part No. |
HUF76419S3S HUF76419P3 FN4669
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OCR Text |
.... . . . . . . . . . . . . . . . ID Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....19A, VGS = 5V (Figure 9) ID = 18A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance J... |
Description |
27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB From old datasheet system
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File Size |
332.27K /
9 Page |
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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Part No. |
BTS149 Q67060-S6503-A3 OBTS149 Q67060-S6503-A2
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OCR Text |
... Clamping energy
VDS RDS(on) ID(lim) ID(ISO) EAS
60 18 30 19
V m A A
6000 mJ
Application
* All kinds of resistive, inducti...19A td = 400 ms, RI = 2 , ID= 19A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 6... |
Description |
Smart Lowside Power Switch From old datasheet system
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File Size |
137.14K /
10 Page |
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it Online |
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FQB19N10L FQI19N10L FQB19N10LTM
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OCR Text |
...te Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25C unless otherwise noted
Parameter Drain-Source Voltage - Cont...19A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 19A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25... |
Description |
100V Logic N-Channel MOSFET(漏源电压00V的逻辑N沟道增强型MOS场效应管) 19 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 100V N-Channel Logic Level QFET
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File Size |
608.39K /
9 Page |
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it Online |
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