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  id-19a Datasheet PDF File

For id-19a Found Datasheets File :: 274    Search Time::1.156ms    
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    2SJ661

Sanyo Semicon Device
Part No. 2SJ661
OCR Text ...che Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings --60 20 --38 --152 1.65 65 150 --55...19A ID=--19A, VGS=--10V ID=--19A, VGS=--4V Ratings min --60 --1 10 --1.2 18 31 29.5 40 39 56 --2.6 t...
Description P-Channel Silicon MOSFET General-Purpose Switching Device

File Size 38.83K  /  4 Page

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    HUF76419S3S HUF76419P3 FN4669

Intersil, Corp.
Intersil Corporation
Part No. HUF76419S3S HUF76419P3 FN4669
OCR Text .... . . . . . . . . . . . . . . . ID Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....19A, VGS = 5V (Figure 9) ID = 18A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance J...
Description 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
From old datasheet system

File Size 332.27K  /  9 Page

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    19N10L-TQ2-R 19N10L-TQ2-T 19N10G-TN3-R 19N10L-T3P-T 19N10L-TA3-T 19N10L-TN3-R 19N10G-TA3-T 19N10G-TQ2-R 19N10G-TQ2-T 19N

UNISONIC TECHNOLOGIES CO LTD
Part No. 19N10L-TQ2-R 19N10L-TQ2-T 19N10G-TN3-R 19N10L-T3P-T 19N10L-TA3-T 19N10L-TN3-R 19N10G-TA3-T 19N10G-TQ2-R 19N10G-TQ2-T 19N1009 19N10L-TM3-T
OCR Text ... 25 V Continuous Drain Current ID 15.6 A Pulsed Drain Current (Note 2) IDM 62.4 A Avalanche Current (Note 2) IAR 15.6 A Single Pulsed Avala...19A, VGS=10V Gate Source Charge QGS (Note 1, 2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn...
Description 100V N-Channel MOSFET
15.6 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251

File Size 226.28K  /  6 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BTS149 Q67060-S6503-A3 OBTS149 Q67060-S6503-A2
OCR Text ... Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 18 30 19 V m A A 6000 mJ Application * All kinds of resistive, inducti...19A td = 400 ms, RI = 2 , ID= 19A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 6...
Description Smart Lowside Power Switch
From old datasheet system

File Size 137.14K  /  10 Page

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    BTS149

INFINEON[Infineon Technologies AG]
Part No. BTS149
OCR Text ...d single pulse inductive energy ID(ISO) = 19 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 301...19A td = 400 ms, RI = 2 , ID = 19A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC ...
Description Smart Lowside Power Switch

File Size 295.45K  /  10 Page

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    FQB19N10 FQI19N10 FQB19N10TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FQB19N10 FQI19N10 FQB19N10TM
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...19A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 19A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25...
Description 100V N-Channel QFET
100V N-Channel MOSFET

File Size 574.71K  /  9 Page

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    FQB19N10L FQI19N10L FQB19N10LTM

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQB19N10L FQI19N10L FQB19N10LTM
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...19A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 19A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25...
Description 100V Logic N-Channel MOSFET(漏源电压00V的逻辑N沟道增强型MOS场效应管) 19 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
100V N-Channel Logic Level QFET

File Size 608.39K  /  9 Page

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For id-19a Found Datasheets File :: 274    Search Time::1.156ms    
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