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hitachi
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Part No. |
3SK319
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OCR Text |
...cteristics; (NF= 1.4 dB typ. at f= 900 MHz) * Excellent cross modulation characteristics * Capable low voltage operation; +B= 5V
Outline
...966 0.960 0.955 0.948 0.942 0.937 0.930 0.923 0.917 0.910 ANG -2.2 -4.5 -6.7 -8.7 -11.0 -13.2 -15.3 ... |
Description |
Silicon NPN Triple Diffused From old datasheet system
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File Size |
56.55K /
9 Page |
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it Online |
Download Datasheet |
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Philips
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Part No. |
BF908R BF908 BF908-R_2
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OCR Text |
...L VDS ID Ptot Tj yfs Cig1-s Crs F drain current total power dissipation operating junction temperature forward transfer admittance input cap...966 0.965 0.965 0.966 -2.4 -4.9 -9.5 -13.9 -18.5 -22.8 -27.0 -31.2 -35.4 -39.4 -43.7 -2.4 -5.0 -9.7 ... |
Description |
Dual-gate MOS-FETs From old datasheet system
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File Size |
56.78K /
8 Page |
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it Online |
Download Datasheet |
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Motorola
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Part No. |
MBC13720
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OCR Text |
... 2.7 V, EN1 = High, EN2= High)
f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200...966 2.886 2.778 2.691 S21 168 157 148 138 131 125 119 114 109 105 101 98 95 92 89 87 84 82 80 78 76... |
Description |
The RF Building Block Series SiGe:C Low Noise Amplifier Wite Bypass Switch From old datasheet system
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File Size |
387.75K /
12 Page |
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it Online |
Download Datasheet |
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ERICSSON[Ericsson] Ericsson Microelectronics
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Part No. |
PTF10007
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OCR Text |
...
50 Output Pow er (W) 40 80 Ef f iciency (%) 60 40 20 0 0 1 2 3 100
1 A -1 2000 3456 7 9723
Efficiency
Package 20222
Output Power...966 0.967 0.967 0.968 0.968 0.967 0.966 0.967 0.968 0.967 0.967 0.967 0.966 0.966 0.966 0.966 0.966 ... |
Description |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦,1.0 GHz的GOLDMOS场效应晶体管 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
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File Size |
234.16K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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