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Freescale Semiconductor...
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| Part No. |
MRF6V2300NBR1 MRF6V2300NR1
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| OCR Text |
...le - ended (top view) rf out /v ds figure 1. pin connections rf out /v ds rf in /v gs rf in /v gs note: exposed backside of the package is ...319 w) v dd = 50 vdc, i dq = 900 ma f = 220 mhz measured with 30 mv(rms)ac @ 1 mhz v gs = 0 vdc... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
637.20K /
16 Page |
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百利通电子（上海）有限公
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| Part No. |
PI3B16233VE
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| OCR Text |
... e m a r a pn o i t p i r c s e ds n o i t i d n o c t s e t ) 1 ( . n i m. p y t ) 2 ( . x a ms t i n u v h i e g a t l o v h g i h t u p n...319 8.1 .0197 bsc bsc packaging mechanical: 56-pin tssop (a) 0.25 0.20 .025 bsc 0.635 .00 8 .00 8... |
| Description |
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| File Size |
336.44K /
5 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STD40NF10
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| OCR Text |
...diagram type v dss r ds(on) i d std40nf10 100v < 0.028 ? 50a 1 3 dpak www.st.com order codes part number marking package packagin...319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions ar... |
| Description |
N-Channel Power MOSFET
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| File Size |
341.40K /
11 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STD95N4F3
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| OCR Text |
... diagram type v dss r ds(on) i d pw std95n4f3 40v <6.5m ? 80a 110w stp95n4f3 40v <6.5m ? 80a 110w stu95n4f3 40v <6.5m ? 80a 110w 1...319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions ar... |
| Description |
N-channel Power MOSFET
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| File Size |
346.28K /
14 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STD95N4LF3
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| OCR Text |
...diagram type v dss r ds(on) max i d p d std95n4lf3 40 v < 6.0 m ? 80 a (1) 1. value limited by wire bonding 110 w dpak 1 3 am014...319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions ar... |
| Description |
Power MOSFETs
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| File Size |
807.16K /
14 Page |
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it Online |
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Excelics Semiconductor
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| Part No. |
EIA1114-2
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| OCR Text |
...n f = 11.0-14.0ghz v ds = 8 v, i dsq 750ma 32.5 33.5 dbm g 1db gain at 1db compression f = 11.0-14.0ghz v ds = 8 v, i dsq 750ma 6.0 7.0 db ? g gain flatness ... |
| Description |
11.0-14.0 GHz 2-Watt Internally Matched Power FET
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| File Size |
98.01K /
1 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STD5NM60T4
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| OCR Text |
...dmesh? power mosfet n typical r ds (on) = 0.9 w n high dv/dt and avalanche capabilities n 100% avalanche tested n low input capacitance and ...319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions ar... |
| Description |
N-CHANNEL 650V @Tjmax- 0.9 OHM - 8A TO-220/TO-220FP/DPAK/IPAK MDMESH POWER MOSFET
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| File Size |
593.36K /
13 Page |
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it Online |
Download Datasheet |
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