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Nexperia
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| Part No. |
BUK7M8R5-40H
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| OCR Text |
channel 40 v, 8.5 m? standard level mosfet in lfpak33 5 february 2019 product data sheet 1. general description automotive qualified standa...p tot total power dissipation t mb = 25 c; fig. 1 - - 59 w static characteristics r dson drain-sou... |
| Description |
N-channel 40 V, 8.5 mstandard level MOSFET in LFpAK33
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| File Size |
266.80K /
11 Page |
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it Online |
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Skyworks Solutions
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| Part No. |
AAT1121IES-0.6-T1 AAT1121IpS-0.6-T1
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| OCR Text |
...onnected to the source of the p-channel mosfet. connect to the input capacitor. 2 vin input bias voltage for the converter. 3 gnd non-power signal ground pin. 4 fb feedback input pin. connect this pin to an external resistive divider for ad... |
| Description |
1.5MHz, 250mA Step-Down Converter
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| File Size |
437.11K /
19 Page |
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Fairchild Semiconductor
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| Part No. |
FDD8426H
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| OCR Text |
channel powerTrench(R) MOSFET
September 2009
FDD8426H
Dual N & p-channel powerTrench(R) MOSFET
N-channel: 40 V, 12 A, 12 m p-channel: -40 V, -10 A, 17 m Features
Q1: N-channel Max rDS(on) = 12 m at VGS = 10 V, ID = 12 A Max rDS(on)... |
| Description |
40V Dual N & p-channel powerTrenchMOSFET
Dual N & p-channel powerTrench垄莽 MOSFET N-channel: 40 V, 12 A, 12 m楼? p-channel: -40 V, -10 A, 17 m楼?
Dual N & p-channel powerTrench? MOSFET N-channel: 40 V, 12 A, 12 mΩ p-channel: -40 V, -10 A, 17 mΩ
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| File Size |
447.38K /
11 Page |
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it Online |
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Skyworks Solutions
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| Part No. |
AAT4620ITp-T1
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| OCR Text |
...rtswitch is a current limited p-channel mosfet power switch designed for high-side load- switching applications in pcmcia gsm/gprs/3g modem cards. used in conjunction with a super capacitor, the aat4620 will ensure that the power ratings... |
| Description |
pCMCIA Current Limit Interface and Capacitor Charger
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| File Size |
518.98K /
14 Page |
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Nexperia
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| Part No. |
pMV230ENEA
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| OCR Text |
channel trench mosfet 2 march 2016 product data sheet 1. general description n-channel enhancement mode field-effect transistor (fet) in a s...p 10 s - 5.9 a e ds(al)s non-repetitive drain-source avalanche energy t j(init) = 25 c; i d = 0.... |
| Description |
60V, N-channel Trench MOSFET
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| File Size |
340.50K /
16 Page |
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it Online |
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Nexperia
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| Part No. |
pMV16UN
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| OCR Text |
...ofile 1.1 general description n-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (...p 10 s - 25 a p tot total power dissipation t amb =25c [2] - 510 mw [1] - 930 mw t sp = 25 c - 4170... |
| Description |
20 V, 5.8 A N-channel Trench MOSFET
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| File Size |
221.14K /
17 Page |
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it Online |
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Nexperia
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| Part No. |
pMV100XpEA
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| OCR Text |
channel trench mosfet 15 june 2017 product data sheet 1. general description p-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (smd) plastic package using trench mosfet technology. ... |
| Description |
20 V, p-channel Trench MOSFET
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| File Size |
256.00K /
15 Page |
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it Online |
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MAXIM - Dallas Semiconductor
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| Part No. |
MAX2839 MAX2839ETN MAX2839ETNT
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| OCR Text |
...fdm and implements programmable channel filters for 3.5mhz to 20mhz rf channel bandwidths. the trans - ceiver requires only 2s tx-rx s...p-p analog outputs: rxbbia+, rxbbia-, rxbbqa+, rxbbqa-, rxbbib+, rxbbib-, rxbbqb+, rxbbqb-, cpout+... |
| Description |
2.3GHz to 2.7GHz MIMO Wireless Broadband RF Transceiver
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| File Size |
1,042.00K /
39 Page |
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it Online |
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Price and Availability
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