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Samsung
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| Part No. |
K9LAG08U1A K9G8G08U0A
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| OCR Text |
...ase - page program : (2k + 64)byte - block erase : (256k + 8k)byte ? page read operation - page size : (2k + 64)byte - random r...write cycle time - program time : 800 s(typ.) - block erase time : 1.5ms(typ.) ? command/addr... |
| Description |
FLASH MEMORY
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| File Size |
1,046.56K /
45 Page |
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MACRONIX INTERNATIONAL CO LTD
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| Part No. |
MX28F320J3TC-12C3
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| OCR Text |
...ser programmable otp cells ? 32-byte write buffer - 6 us/byte effective programming time ? enhanced data protection features absolute protec- tion with vpen = gnd - flexible block locking - block erase/program lockout during power transi- t... |
| Description |
2M X 16 FLASH 3V PROM, 120 ns, PDSO56
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| File Size |
1,621.32K /
56 Page |
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Silicon Storage Technology, Inc.
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| Part No. |
SST36VF3204-70-4E-EKE SST36VF3204-70-4E-B3KE
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| OCR Text |
...machine to reading array data * Byte# Pin - Selects 8-bit or 16-bit mode * Sector-Erase Capability - Uniform 2 KWord sectors * Chip-Erase Ca...Write Timing - Internal VPP Generation * End-of-Write Detection - Toggle Bit - Data# Polling - Ready... |
| Description |
32 Mbit (x8/x16) Concurrent SuperFlash
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| File Size |
417.76K /
34 Page |
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CYPRESS SEMICONDUCTOR CORP
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| Part No. |
MT58L64V36PF-5IT MT58L64V36PF-10IT MT58L64V36PF-6IT MT58L128V18PF-6IT
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| OCR Text |
...s and data outputs individual byte write control and global write three chip enables for simple depth expansion and address pipelining clock-controlled and registered addresses, data i/os and control signals internally self-timed wr... |
| Description |
64K X 36 STANDARD SRAM, 3.5 ns, PBGA165 64K X 36 STANDARD SRAM, 5 ns, PBGA165 128K X 18 STANDARD SRAM, 3.5 ns, PBGA165
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| File Size |
454.92K /
25 Page |
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it Online |
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Price and Availability
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