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ST Microelectronics
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| Part No. |
B9NC60
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| OCR Text |
...600 v 600 v < 0.75 w < 0.75 w 9.0 a 9.0 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltag...9a i d drain current (continuos) at t c = 100c 5.7 a i dm (1) drain current (pulsed) 36 a p tot to... |
| Description |
Search --To STB9NC60
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| File Size |
399.60K /
10 Page |
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ST Microelectronics
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| Part No. |
W10NK80Z
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| OCR Text |
...rrent (continuous) at t c = 25c 9 9 (*) 9 a i d drain current (continuous) at t c = 100c 6 6 (*) 6 a i dm ( ) drain current (pulsed) 36 36...9a e as single pulse avalanche energy (starting t j = 25 c, i d =i ar ,v dd =50v) 290 mj symbol para... |
| Description |
Search --To STW10NK80Z
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| File Size |
346.33K /
11 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDR8321L
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| OCR Text |
...
(Note 1)
2.5 - 8 1.5 - 8 2.9 10
(Note 2)
V V A
PD TJ,TSTG
Maximum Power Dissipation Operating and Storage Temperature Range
...9A V ON/OFF = 1.5 - 8V PW =300us, D 2%
I L = 2A V ON/OFF = 1.5 - 8V PW =300us, D 2%
0.3
0.3... |
| Description |
P-Channel MOSFET With Gate Driver For Load Switch Application
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| File Size |
220.04K /
8 Page |
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STMicroelectronics N.V.
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| Part No. |
STB11NK40ZT4
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| OCR Text |
...rent (continuous) at t c =25 c 9 9(*) a i d drain current (continuous) at t c = 100 c 5.67 5.67(*) a i dm ( l ) drain current (pulsed) 36 ...9a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 190 mj symbol para... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 9A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 9A条（丁）|63AB
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| File Size |
200.19K /
12 Page |
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STMicroelectronics N.V.
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| Part No. |
STD9N10L
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| OCR Text |
...t source-drain current (pulsed) 9 36 a a v sd ( * ) forward on voltage i sd =9a v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =9a di/dt=100a/ m s v dd =25v t j = 150 o c 110 0.4 7.... |
| Description |
N-Channel 100V-0.22Ω-9A-IPAK/DPAK Power MOS Transistor(N沟道功率MOS晶体 N -通道100V-0.22Ω-9A-IPAK/DPAK功率MOS晶体管（不适用马鞍山沟道功率晶体管
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| File Size |
44.21K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDS3570_00 FDS3570 FDS357000
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| OCR Text |
...fficiency.
Features * * * *
9 A, 80 V. RDS(ON) = 0.020 @ VGS = 10 V RDS(ON) = 0.023 @ VGS = 6 V. Fast switching speed. High performanc...9A VGS = 10V
ID = 4.5A 0.05 0.04 0.03 0.02 0.01 0 0 2 4 6 8 10 TA = 125 C
o
TA = 25 C
o
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| Description |
80V N-Channel PowerTrench MOSFET
80V N-Channel PowerTrench MOSFET
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| File Size |
76.78K /
5 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDZ201N_04 FDZ201N FDZ201N04
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| OCR Text |
...and low RDS(ON).
Features
* 9 A, 20 V. RDS(ON) = 18 m @ VGS = 4.5 V RDS(ON) = 30 m @ VGS = 2.5 V * Occupies only 5 mm of PCB area: only ...9A, diF/dt = 100 A/s Diode Reverse Recovery Charge
(Note 2)
0.7 20 14
1.7 1.2
A V nS nC
... |
| Description |
N-Channel 2.5V Specified PowerTrench BGA MOSFET
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| File Size |
173.41K /
6 Page |
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it Online |
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