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SZ25A33 MAX9550 1533F D2282UK AR2004 T6801 CAT25640 SI2327
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  9.9a Datasheet PDF File

For 9.9a Found Datasheets File :: 4788    Search Time::1.937ms    
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    ST Microelectronics
Part No. B9NC60
OCR Text ...600 v 600 v < 0.75 w < 0.75 w 9.0 a 9.0 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltag...9a i d drain current (continuos) at t c = 100c 5.7 a i dm (1) drain current (pulsed) 36 a p tot to...
Description Search --To STB9NC60

File Size 399.60K  /  10 Page

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    CHA6250-QFG CHA6250-QFG20

United Monolithic Semiconductors
Part No. CHA6250-QFG CHA6250-QFG20
OCR Text ...req frequency range 5.5 9.0 ghz gain linear gain 23.5 db o toi output toi 43.0 db m pout output power...9a - 0.5 v 5.5 - 9ghz power amplifier cha6250 - qfg ref. : dscha6250 - qfg2272 ...
Description 5.5-9GHz Power Amplifier

File Size 390.41K  /  14 Page

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    ST Microelectronics
Part No. W10NK80Z
OCR Text ...rrent (continuous) at t c = 25c 9 9 (*) 9 a i d drain current (continuous) at t c = 100c 6 6 (*) 6 a i dm ( ) drain current (pulsed) 36 36...9a e as single pulse avalanche energy (starting t j = 25 c, i d =i ar ,v dd =50v) 290 mj symbol para...
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File Size 346.33K  /  11 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDR8321L
OCR Text ... (Note 1) 2.5 - 8 1.5 - 8 2.9 10 (Note 2) V V A PD TJ,TSTG Maximum Power Dissipation Operating and Storage Temperature Range ...9A V ON/OFF = 1.5 - 8V PW =300us, D 2% I L = 2A V ON/OFF = 1.5 - 8V PW =300us, D 2% 0.3 0.3...
Description P-Channel MOSFET With Gate Driver For Load Switch Application

File Size 220.04K  /  8 Page

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    STMicroelectronics N.V.
Part No. STB11NK40ZT4
OCR Text ...rent (continuous) at t c =25 c 9 9(*) a i d drain current (continuous) at t c = 100 c 5.67 5.67(*) a i dm ( l ) drain current (pulsed) 36 ...9a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 190 mj symbol para...
Description TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 9A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 9A条(丁)|63AB

File Size 200.19K  /  12 Page

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    STMicroelectronics N.V.
Part No. STD9N10L
OCR Text ...t source-drain current (pulsed) 9 36 a a v sd ( * ) forward on voltage i sd =9a v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =9a di/dt=100a/ m s v dd =25v t j = 150 o c 110 0.4 7....
Description N-Channel 100V-0.22Ω-9A-IPAK/DPAK Power MOS Transistor(N沟道功率MOS晶体 N -通道100V-0.22Ω-9A-IPAK/DPAK功率MOS晶体管(不适用马鞍山沟道功率晶体管

File Size 44.21K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDS3570_00 FDS3570 FDS357000
OCR Text ...fficiency. Features * * * * 9 A, 80 V. RDS(ON) = 0.020 @ VGS = 10 V RDS(ON) = 0.023 @ VGS = 6 V. Fast switching speed. High performanc...9A VGS = 10V ID = 4.5A 0.05 0.04 0.03 0.02 0.01 0 0 2 4 6 8 10 TA = 125 C o TA = 25 C o ...
Description 80V N-Channel PowerTrench MOSFET
80V N-Channel PowerTrench MOSFET

File Size 76.78K  /  5 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDZ201N_04 FDZ201N FDZ201N04
OCR Text ...and low RDS(ON). Features * 9 A, 20 V. RDS(ON) = 18 m @ VGS = 4.5 V RDS(ON) = 30 m @ VGS = 2.5 V * Occupies only 5 mm of PCB area: only ...9A, diF/dt = 100 A/s Diode Reverse Recovery Charge (Note 2) 0.7 20 14 1.7 1.2 A V nS nC ...
Description N-Channel 2.5V Specified PowerTrench BGA MOSFET

File Size 173.41K  /  6 Page

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    IRF7314

International Rectifier
Part No. IRF7314
OCR Text 9.1436B PRELIMINARY l l l l l IRF7314 HEXFET(R) Power MOSFET 8 7 Generation V Technology Ultra Low On-Resistance Dual P-Channel ...9A 0.082 0.098 VGS = -2.7V, ID = -1.5A --- --- V VDS = VGS, ID = -250A 5.9 --- S VDS = -10V, ID =...
Description HEXFET Power MOSFET

File Size 138.29K  /  7 Page

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    IRF7316

IRF[International Rectifier]
Part No. IRF7316
OCR Text 9.1505B IRF7316 l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated ...9A 0.098 VGS = -4.5V, ID = -3.6A V VDS = VGS, ID = -250A S VDS = -15V, ID = -4.9A -1.0 VDS = -2...
Description HEXFET POWER MOSFET

File Size 235.36K  /  7 Page

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