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    MT58L256L36F

Micron Technology
Part No. MT58L256L36F
OCR Text 8mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM 8mb SYNCBURSTTM SRAM FEATURES * Fast clock and OE# access times * Single +3.3V +0.3V/-0.165V power supply (VDD) * Separate +3.3V or +2.5V isolated output buffer supply (VDDQ) * S...
Description 8mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM

File Size 362.01K  /  27 Page

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    MT58L256L36P MT58L256L32P MT58L256V32P MT58L256V36P MT58L512L18P MT58L512V18P

Micron Technology
Part No. MT58L256L36P MT58L256L32P MT58L256V32P MT58L256V36P MT58L512L18P MT58L512V18P
OCR Text 8mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM 8mb SYNCBURSTTM SRAM FEATURES * Fast clock and OE# access times * Single +3.3V +0.3V/-0.165V power supply (VDD) * Separate +3.3V or +2.5V isolated output buffer supply (VDDQ) *...
Description 8mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM

File Size 382.81K  /  27 Page

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    Zarlink
Part No. MT90863
OCR Text ...hannels per stream. In 4Mb/s or 8mb/s mode, these pins accept serial TDM data streams at 4.096 or 8.192 Mb/s with 64 or 128 channels per stream respectively. In Frame Evaluation Mode (FEM), they are frame evaluation inputs. 118-125 B6...
Description 3V Rate Conversion Digital Switch

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    Toshiba Corporation
Toshiba, Corp.
Part No. THNCFXXXBAI THNCF096MBA THNCF096MBAI THNCF192MBAI THNCF256MBA THNCFXXXMBA
OCR Text ... write : max 1.5 mbytes/second (8mb to 48mb), 3.2 mbytes/second (64mb to 512mb) ? sustained read : max 6.5mbytes/second ? single +5 volt or 3.3 volt power supply and very low power consumption with automatic power management. note...
Description Small Form Factor Card
The THNCFxxxMBA/BAI series CompactFlash card is a flash technology based with ATA interface flash memory card. 在THNCFxxxMBA /白系列CF卡是闪存技术,ATA接口的闪存卡的

File Size 530.80K  /  48 Page

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    Micron Technology, Inc.
Part No. MT58L1MV18D
OCR Text 8mb: 512k x 18, 256k x 32/36 3.3v i/o, pipelined, dcd syncburst sram micron technology, inc., reserves the right to change produ cts or specifications without notice. mt58l512l18d_2.p65 ? rev. 8/00 ?2000, micron technology, inc. 8mb: 512k x...
Description 8mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 8mb的:12k × 1856 × 32/36 3.3V的I / O的流水线,双氰胺SYNCBURST的SRAM

File Size 425.39K  /  26 Page

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    Micron Technology, Inc.
Part No. MT4LDT464AG MT4LDT264AG MT4LDT164AG
OCR Text ... in-line memory module (dimm) ? 8mb (1 meg x 64), 16mb (2 meg x 64) and 32mb (4 meg x 64) ? nonbuffered ? high-performance cmos silicon-gate process ? single +3.3v 0.3v power supply ? all inputs, outputs and clocks are ttl-compatible ? re...
Description 4 Meg x 64 Nonbuffered DRAM DIMMs(4 M x 64无缓冲动态RAM双列直插存储器模
1 Meg x 64 Nonbuffered DRAM DIMMs(1M x 64无缓冲动态RAM双列直插存储器模 1梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块
2 Meg x 64 Nonbuffered DRAM DIMMs(2M x 64无缓冲动态RAM双列直插存储器模 2梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块

File Size 446.53K  /  31 Page

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    NetBurner, Inc.
Part No. CB34EX-100CR CB34-EX-100IR
OCR Text ...essor with etpu co-processor ? 8mb sdram and 2mb of flash memory ? 10/100 ethernet ? rs-232/422/485 serial ports,with can peripheral interface ? industrial temperature range (-40c to 85 c) ? dhcp/static ip support optional the followi...
Description
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    CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E160GB-43BE CXK77P36E160GB-42BE CXK77P18E160GB-42E CXK77P18E160GB-4AE CXK

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Yuasa Battery, Inc.
Integrated Circuit Technology Corp
Microsemi, Corp.
Sony, Corp.
Sony Corporation
Part No. CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E160GB-43BE CXK77P36E160GB-42BE CXK77P18E160GB-42E CXK77P18E160GB-4AE CXK77P18E160GB-44E CXK77P18E160GB-43E CXK77P36E160GB-42E CXK77P18E160GB-43AE CXK77P36E160GB-43AE CXK77P18E160GB-42AE CXK77P18E160GB-4BF CXK77P36E160GB-4BE CXK77P36E160GB-42AE CXK77P36E160GB-4AE
OCR Text 8mb lw r-l w/ ec, rev 1.1 1 / 25 march 2, 2001 cxk77p36e160gb / cxk77p18e160gb sony 4/42/43/44 16mb lw r-l hstl high speed synchronous srams (512k x 36 or 1m x 18) 8mb lw r-l w/ ec hstl high speed synchronous srams (256k x 36 or 512k x 18)...
Description 1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器(为512k × 3600万18
CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN

File Size 261.11K  /  25 Page

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    IDT7M9514 IDT7M9510 IDT7M9510S100M IDT7M9510S150M IDT7M9510S180M IDT7M9510S200M IDT7M9510S250M IDT7M9510SE100M IDT7M9510

Integrated Device Technology, Inc.
IDT
Part No. IDT7M9514 IDT7M9510 IDT7M9510S100M IDT7M9510S150M IDT7M9510S180M IDT7M9510S200M IDT7M9510S250M IDT7M9510SE100M IDT7M9510SE150M IDT7M9510SE180M IDT7M9510SE200M IDT7M9510SE250M IDT7M9510SR100M IDT7M9510SR150M IDT7M9510SR180M IDT7M9510SR200M IDT7M9510SR250M IDT7M9514S100M IDT7M9514S150M IDT7M9514S180M IDT7M9514S200M IDT7M9514S250M IDT7M9514SE100M IDT7M9514SE150M IDT7M9514SE180M IDT7M9514SE200M IDT7M9514SE250M IDT7M9514SR100M IDT7M9514SR150M IDT7M9514SR180M IDT7M9514SR200M IDT7M9514SR250M
OCR Text ... SIMM containing 4MB (1M x 32), 8mb (2M x 32), 16 MB (4M x 32), or 32MB (8M x 32), 64MB (16M x 32), or 128mb (32M x 32) allowing the 7M9510/7M9514 to have up to a maximum of 128mb of memory. 60ns memory is recommended. The memory configurat...
Description IDT79RV4640/IDT79RC64V474 PCI MEZZANINE CARD PCMCIA BUS CONTROLLER, XMA

File Size 58.67K  /  7 Page

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