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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDZ191P
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| OCR Text |
...nchTM WL-CSP MOSFET
-20V, -1A, 85m Features General Description
Max rDS(on) = 85m at VGS = -4.5V, ID = -1A Max rDS(on) = 123m at VGS = -2.5V, ID = -1A Max rDS(on) = 200m at VGS = -1.5V, ID = -1A Occupies only 1.5 mm2 of PCB area Less than... |
| Description |
P-Channel 1.5V PowerTrench WL-CSP MOSFET
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| File Size |
387.58K /
7 Page |
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KEC Holdings
KEC[KEC(Korea Electronics)]
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| Part No. |
KMB3D5PS30QA
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| OCR Text |
...n-Source ON Resistance. RDS(ON)=85m (Max.) @ VGS=-10V RDS(ON)=180m (Max.) @ VGS=-4.5V
8
T D P G L
A
5 B1 B2
1
4
MOSFET Maximum Ratings (Ta=25
CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC Drain Current Pulse... |
| Description |
SBD and P-Ch Trench MOSFET SBD智能交通和P -沟道MOSFET
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| File Size |
464.70K /
5 Page |
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SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPC6604ST6RG SPC6604
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| OCR Text |
...V P-Channel -20V/-3.4A,RDS(ON)= 85m@VGS=-4.5V -20V/-2.4A,RDS(ON)=110m@VGS=-2.5V -20V/-1.7A,RDS(ON)=130m@VGS=-1.8V -20V/-1.0A,RDS(ON)=200m@VGS=-1.25V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and max... |
| Description |
N & P Pair Enhancement Mode MOSFET
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| File Size |
260.66K /
11 Page |
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SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPP2305S23RG SPP2305
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| OCR Text |
...m@VGS=-4.5V -15V/-3.0A,RDS(ON)= 85m@VGS=-2.5V -15V/-2.0A,RDS(ON)=105m@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
PIN CONFIGURAT... |
| Description |
P-Channel Enhancement Mode MOSFET
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| File Size |
208.21K /
8 Page |
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SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPP3052T252RG SPP3052
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| OCR Text |
...50m@VGS=-10V -30V/- 16A,RDS(ON)=85m@VGS=- 5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252-2L package design
PIN CONFIGURATION ( TO-252-2L )
PART MARKING
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| Description |
P-Channel Enhancement Mode MOSFET
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| File Size |
202.85K /
8 Page |
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STANSON[Stanson Technology]
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| Part No. |
ST6006T220TG ST6006 ST6006S ST6006T220RG
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| OCR Text |
...
FEATURE 20V/2.8A, RDS(ON) = 85m-ohm @VGS = 4.5V 20V/2.4A, RDS(ON) = 115m-ohm @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
ST... |
| Description |
N Channel Enchancement Mode MOSFET
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| File Size |
197.75K /
8 Page |
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SUMIDA[Sumida Corporation]
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| Part No. |
CR32
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| OCR Text |
...L (H) D.C.R.( ) : Max. 72m 78m 85m 91m 104m 111m 137m 143m 170m 176m Rated Current (A) *1
Measuring Freq. (L) / L CR32 1.0 H - 8.2 H (7.96MHz), 10 H - 390 H (100kHz)
Tolerance of Inductance /
1R0 1R2 1R4 1R5 1R8 2R0 2R2 2R5 2... |
| Description |
POWER INDUCTORS (SMD Type)
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| File Size |
216.69K /
1 Page |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TSM2311CX TSM2311
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| OCR Text |
...), Vgs @ - 2.5V, Ids @ - 2.5A = 85m
Features
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package
Block Diagram
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| Description |
20V P-Channel Enhancement Mode MOSFET
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| File Size |
153.32K /
3 Page |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZX5T955ZTA ZX5T955Z
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| OCR Text |
85m ; IC = -3A DESCRIPTION
Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power manageme... |
| Description |
140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
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| File Size |
85.20K /
6 Page |
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Price and Availability
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