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  800v ms Datasheet PDF File

For 800v ms Found Datasheets File :: 1694    Search Time::1.921ms    
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    APT33N90JCU3

Microsemi Corporation
Part No. APT33N90JCU3
OCR Text ...very charge i f = 30a v r = 800v di/dt=200a/s t j = 125c 1700 nc apt33n90jcu3 apt33n90jcu3 ? rev 0 august, 200...ms 100 s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limi...
Description ISOTOP? Buck chopper Super Junction MOSFET Power Module

File Size 133.26K  /  6 Page

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    APT33N90JCU2

Microsemi Corporation
Part No. APT33N90JCU2
OCR Text ...very charge i f = 30a v r = 800v di/dt=200a/s t j = 125c 1700 nc apt33n90jcu2 apt33n90jcu2 ? rev 0 august, 200...ms 100 s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limi...
Description ISOTOP Boost chopper Super Junction MOSFET Power Module

File Size 131.72K  /  5 Page

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    IDP12E120NBSP IDB12E120NBSP IDB12E120 Q67040-S4385 Q67040-S4389 IDP12E120

INFINEON[Infineon Technologies AG]
Part No. IDP12E120NBSP IDB12E120NBSP IDB12E120 Q67040-S4385 Q67040-S4389 IDP12E120
OCR Text ...tics Reverse recovery time V R=800v, IF=12A, diF/dt=800A/s, Tj =25C V R=800v, IF=12A, diF/dt=800A/s, Tj =125C V R=800v, IF=12A, diF/dt=800A/s, Tj =150C Symbol min. t rr I rrm Q rr S - Values typ. max. Unit ns 150 215 225 17 20....
Description Silicon Power Diodes - 12A EmCon in TO220-2
Silicon Power Diodes - 12A EmCon in TO263
Fast Switching EmCon Diode
From old datasheet system

File Size 194.70K  /  9 Page

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    Microsemi
Part No. APTMC120TAM17CTPAG
OCR Text ...rge v gs = -5/+20v v bus = 800v i d = 100a 322 nc q gs gate C source charge 92 q g d gate C drain charge 100 t d...ms of such agreement will also apply. this document and the information contained herein may not b...
Description Triple Phase Leg SiC MOSFET Module

File Size 494.67K  /  8 Page

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    E9336AA

GOOD-ARK Electronics
Part No. E9336AA
OCR Text 800v output current 3a features ? low forward voltage drop ? low leakage current ? solder dip 260 c, 10 s ? ideal for automated place...ms single half sine-wave superimposed on rated load 80 rating for fusing(t<8.3ms) 26.7 operating jun...
Description    Low Profile Surface Mount Single Phase Bridge Rectifiers

File Size 345.68K  /  4 Page

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    INFINEON[Infineon Technologies AG]
Part No. IDP04E120 IDB04E120
OCR Text ...tics Reverse recovery time V R=800v, IF=4A, di F/dt=750A/s, Tj=25C V R=800v, IF=4A, di F/dt=750A/s, Tj=125C V R=800v, IF=4A, di F/dt=750A/s, Tj=150C Symbol min. t rr I rrm Q rr S - Values typ. max. Unit ns 115 180 185 7.15 8 8....
Description Silicon Power Diodes - 4A EmCon in TO263
Silicon Power Diodes - 4A EmCon in TO220-2
Fast Switching EmCon Diode

File Size 194.34K  /  9 Page

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    E9336A

GOOD-ARK Electronics
Part No. E9336A
OCR Text 800v output current 3a features ? low forward voltage drop ? low leakage current ? solder dip 260 c, 10 s ? ideal for automated place...ms single half sine-wave superimposed on rated load 100 rating for fusing(t<8.3ms) 42 operating junc...
Description    Low Profile Surface Mount Single Phase Bridge Rectifiers

File Size 345.71K  /  4 Page

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    SM8LZ47

TOSHIBA[Toshiba Semiconductor]
Part No. SM8LZ47
OCR Text ...t) l Isolation Voltage : VDRM = 800v : IT(Rms) = 8A : (dv / dt) c = 10V / s (Min.) : VISOL = 1500V AC Unit: mm MAXIMUM RATINGS CHARACTER...ms IGT VD = 12V RL = 20 VGT VD = 12V RL = 20 SYMBOL IDRM TEST CONDITION VDRM = 800v T2 (+), Gate (+)...
Description BI - DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

File Size 209.92K  /  5 Page

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For 800v ms Found Datasheets File :: 1694    Search Time::1.921ms    
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