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  8.26mm Datasheet PDF File

For 8.26mm Found Datasheets File :: 1566    Search Time::2.188ms    
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    LT9526D

Sharp Electrionic Components
Part No. LT9526D
OCR Text ...) (C) DC Pulse 1.09 1.09 1.09 1.82 1.82 1.82 5 5 5 -25 to +70 -25 to +70 -25 to +70 -30 to +80 -30 to +80 -30 to +80 260 260 260 s Electro-optical Characteristics*5 Lens type Model No. Forward voltage VF(V) Peak emission wavelength IF p...
Description 20mm/ Dome Type/ Colored Diffusion/ High-luminosity/ Large LED Lamps for Indoor Use
?20mm, Dome Type, Colored Diffusion, High-luminosity, Large LED Lamps for Indoor Use

File Size 98.92K  /  4 Page

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    NC7SU04 NC7SU04M5 NC7SU04M5X NC7SU04P5 NC7SU04P5X

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. NC7SU04 NC7SU04M5 NC7SU04M5X NC7SU04P5 NC7SU04P5X
OCR Text ....68 4.18 5.68 2.0 3.0 4.5 5.9 2.82 4.33 5.76 0.00 0.00 0.01 0.04 0.11 0.12 0.15 0.20 0.50 0.50 0.50 0.26 0.26 0.26 0.1 1.0 Min 1.70 2.45 3.6...6mm Package Number MA05B www.fairchildsemi.com 6 NC7SU04 TinyLogic HS Unbuffered Inverter ...
Description TinyLogic HS Unbuffered Inverter
TinyLogic HS Unbuffered Inverter

File Size 77.10K  /  7 Page

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    2SC5536

SANYO[Sanyo Semicon Device]
Part No. 2SC5536
OCR Text ... -53.9 -64.8 -71.4 -76.1 -79.7 -82.6 -85.1 -86.7 -88.6 VCE=2V, IC=30mA, ZO=50 Freq (MHz) 50 100 150 200 250 300 350 400 450 500 | S11 | 0.605 0.660 0.677 0.681 0.686 0.687 0.689 0.691 0.691 0.691 S11 -104.0 -137.6 -151.7 -159.5 -164.5 ...
Description NPN Epitaxial Planar Silicon Transistor VHF Low-Noise Amplifier , OSC Applications

File Size 34.38K  /  4 Page

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    2SC5538

Sanyo Semicon Device
Part No. 2SC5538
OCR Text ... -65.1 -68.7 -71.0 -74.7 -79.6 -82.8 -86.7 -90.0 No.6291-3/4 2SC5538 VCE=5V, IC=20mA, ZO=50 Freq (MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 | S11 | 0.643 0.530 0.459 0.447 0.440 0.434 0.437 0.437 0.438 0.439 0.444 S11 ...
Description NPN Epitaxial Planar Silicon Transistor VHF to UHF OSC, High-Frequency Amplifier Applications

File Size 35.64K  /  4 Page

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    2SC5539

SANYO[Sanyo Semicon Device]
Part No. 2SC5539
OCR Text ....971 S21 131.0 111.8 96.1 88.0 82.2 77.3 72.8 68.8 65.1 61.4 58.0 | S12 | 0.032 0.043 0.057 0.072 0.089 0.106 0.124 0.142 0.161 0.179 0.198 S12 55.5 47.8 52.2 57.5 61.1 63.3 64.9 65.5 65.4 65.3 65.0 | S22 | 0.668 0.422 0.247 0.187 0.161 0...
Description NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications

File Size 42.90K  /  5 Page

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    HUF75852G3

FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75852G3
OCR Text ...S = 2.0 (Figures 18, 19) 22 151 82 107 260 285 ns ns ns ns ns ns Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage SYMBOL VSD ISD = 75A ISD = 35A Reverse Recovery Time Reverse Recovered Charge trr QRR ISD = 75...
Description 75A 150V 0.016 Ohm N-Channel UltraFET Power MOSFET
75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET

File Size 190.44K  /  10 Page

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    IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30ASTRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30ASTRR
OCR Text ... = 3.6A ns --- RG = 12 --- RD = 82,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V Dynamic @ TJ = 25C (unless ot...
Description 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A

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    IRFBC30A

International Rectifier, Corp.
Part No. IRFBC30A
OCR Text ... = 3.6A ns --- RG = 12 --- RD = 82,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V Dynamic @ TJ = 25C (unless ot...
Description 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A

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    IRFBC30S IRFBC30L

IRF[International Rectifier]
Part No. IRFBC30S IRFBC30L
OCR Text ... = 3.6A ns --- R G = 12 --- RD =82, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 660 --- VGS = 0V 86 --- pF VDS = 25V 19 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM V SD t rr Q rr ton...
Description 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)

File Size 358.14K  /  10 Page

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    IRGPC40 IRGPC40F

IRF[International Rectifier]
Part No. IRGPC40 IRGPC40F
OCR Text ...e width 5.0s, single shot. C-82 To Order Previous Datasheet Index Next Data Sheet IRGPC40F 60 For both: Triangular w ave: LO A D CU R R E N T (A ) D uty c y cle: 50% TJ = 125C T s in k = 90C G ate drive as s pec...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

File Size 214.50K  /  6 Page

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