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INFINEON[Infineon Technologies AG]
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Part No. |
SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06
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OCR Text |
...C
A 0.01 10 1 1 100 100 nA m 7 6.6 5 4.6 9.5 9.2 6.2 5.9
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resist...06 SPP80N03S2L-06,SPB80N03S2L-06
Electrical Characteristics Parameter Dynamic Characteristics Tra... |
Description |
OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
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File Size |
415.22K /
8 Page |
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it Online |
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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Part No. |
SPP80N06S2L-06 SPB80N06S2L-06
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OCR Text |
...
10
2
10
-5
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
Page 4
tp
2003-05-09
SPP80N06S2L-06 SPB80N06S2L-06
5 Typ. output characteristic ID = f (V DS); T j=25C parameter... |
Description |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 6.3 mOhm OptiMOS Power-Transistor 的OptiMOS功率晶体
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File Size |
309.50K /
8 Page |
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it Online |
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意法半导 STMICROELECTRONICS[STMicroelectronics]
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Part No. |
STP80NF55L-06
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OCR Text |
... V DD = 27 V I D = 40 A R G = 4.7 V GS = 4.5 V (Resistive Load, see fig. 3) V DD = 44 V ID = 80 A V GS = 5 V Min. Typ. 75 300 97 25 46 100 ...06
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Re... |
Description |
N - CHANNEL 55V - 0.005 ohm - 80A TO-220 STripFET POWER MOSFET
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File Size |
82.80K /
8 Page |
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it Online |
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TRIQUINT[TriQuint Semiconductor]
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Part No. |
TGF2022-06
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OCR Text |
...
Value
12.5 V -5V to 0V 282 mA 7 mA 23 dBm See note 3 150 C 320 C -65 to 150 C 2/ 2/ 3/ 4/ 2/
Parameter 1/
Positive Supply Voltage Nega...06
TABLE III RF CHARACTERIZATION TABLE
(TA = 25 C, Nominal) SYMBOL
Power Tuned: Saturated Output ... |
Description |
DC - 20 GHz Discrete power pHEMT
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File Size |
210.63K /
10 Page |
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it Online |
Download Datasheet |
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Price and Availability
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