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Samsung Electronic
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| Part No. |
M374S3323DTS
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| OCR Text |
... eighteen cmos 16m x 8 bit with 4banks synchronous drams in tsop-ii 400mil package and a 2k eeprom in 8-pin tssop package on a 168-pin glass-epoxy substrate. two 0.1uf decoupling capacitors are mounted on the printed circuit board in parall... |
| Description |
32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
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| File Size |
163.87K /
11 Page |
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it Online |
Download Datasheet
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HYNIX
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| Part No. |
HY5DU56162 HY5DU561622CT
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| OCR Text |
...lag Refresh
64Mx4
16M x 4 x 4banks A0 - A12 A0-A9, A11 BA0, BA1 A10 8K
32Mx8
8M x 8 x 4banks A0 - A12 A0-A9 BA0, BA1 A10 8K
16Mx16
4M x 16 x 4banks A0 - A12 A0-A8 BA0, BA1 A10 8K
Rev. 0.2/ Apr. 2003
3
HY5DU56422C(L)T HY... |
| Description |
256M-P DDR SDRAM
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| File Size |
372.02K /
35 Page |
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it Online |
Download Datasheet |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY57V28820HCT-S
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| OCR Text |
4banks x 4m x 8bits synchronous dram rev. 0.2 / aug. 2001 1 0.1 : hynix change 0.2 : burst... |
| Description |
16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
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| File Size |
240.13K /
14 Page |
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it Online |
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Hynix Semiconductor Inc.
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| Part No. |
HY5DU28422DT-X HYNIXSEMICONDUCTORINC.-HY5DU28822DT-X
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| OCR Text |
...mx8 8mx16 organization 8m x 4 x 4banks 4m x 8 x 4banks 2m x 16 x 4banks row address a0 - a11 a0 - a11 a0 - a11 column address a0-a9, a11 a0-a9 a0-a8 bank address ba0, ba1 ba0, ba1 ba0, ba1 auto precharge flag a10 a10 a10 refresh 4k 4k 4k 66... |
| Description |
128Mb-S DDR SDRAM
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| File Size |
408.37K /
33 Page |
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it Online |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY5DU121622DTP-D43I
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| OCR Text |
...8 32mx16 organization 16m x 8 x 4banks 8m x 16 x 4banks row address a0 - a12 a0 - a12 column address a0-a9, a11 a0-a9 bank address ba0, ba1 ba0, ba1 auto precharge flag a10 a10 refresh 8k 8k
rev. 1.0 / may 2007 ... |
| Description |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
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| File Size |
220.88K /
29 Page |
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it Online |
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Samsung Electronic
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| Part No. |
M366S3323DTU
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| OCR Text |
...f sixteen cmos 16m x 8 bit with 4banks synchronous drams in tsop-ii 400mil package and a 2k eeprom in 8-pin tssop package on a 168-pin glass-epoxy substrate. two 0.1uf decoupling capacitors are mounted on the printed circuit board in parall... |
| Description |
32Mx64 SDRAM DIMM based on 16Mx8, 4banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
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| File Size |
167.45K /
11 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
M366S1723DTU
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| OCR Text |
... of eight cmos 16m x 8 bit with 4banks synchronous drams in tsop-ii 400mil package and a 2k eeprom in 8-pin tssop package on a 168-pin glass-epoxy substrate. two 0.1uf decoupling capacitors are mounted on the printed circuit board in paral... |
| Description |
16Mx64 SDRAM DIMM based on 16Mx8, 4banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
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| File Size |
168.37K /
11 Page |
View
it Online |
Download Datasheet |
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