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Infineon Technologies
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Part No. |
H30T90
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OCR Text |
...(th) i c =150 a, v ce = v ge 4.6 5.3 6 v zero gate voltage collector current i ces v ce =900v , v ge =0v t j =25 c t j =150 ...720v, i c =30a v ge =15v - 280 - nc internal emitter inductance measured 5mm (0.197 in.) from... |
Description |
IGBT
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File Size |
285.54K /
12 Page |
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IRF
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Part No. |
G4PH40KD
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OCR Text |
...lel diodes latest generation 4 igbt's offer highest power density motor controls possible hexfred tm diodes optimized for perfor...720v, t j = 125 c v ge = 15v, r g = 10 ? , v cpk < 500v t d(on) turn-on delay time ? 49 ? t j ... |
Description |
IRG4PH40KD
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File Size |
237.17K /
10 Page |
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Advanced Power Electron...
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Part No. |
AP09N90W-HF
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OCR Text |
...on-resistance 3 v gs =10v, i d =4.5a - - 1.2 ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance...720v, v gs =0v - - 100 ua drain-source leakage current (t j =125 o c) v ds =720v , v gs =0v - - 500... |
Description |
Fast Switching Characteristic
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File Size |
96.03K /
5 Page |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
HGTG20N120C3D G20N120
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OCR Text |
...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,466,176 4,587,713 4,620,211 4,641,162 4,694,313 4,794,432 4,809,047 4,860,080 4,901,127 4,969,02...720V, TJ = 125oC, RGE = 3.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Sp... |
Description |
45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 45 A, 1200 V, N-CHANNEL IGBT, TO-247 45A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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File Size |
97.30K /
8 Page |
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Price and Availability
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